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Same model may have multiple batches, images only for reference.
PMN34UP,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PMN34UP,115

Part No PMN34UP,115
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 5A 6TSOP
Datasheet
PMN34UP,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 950mV @ 250μA
Max Gate Charge 23nC @ 4.5V
Max Input Capacitance 1950pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 540mW (Ta), 6.25W (Tc)
Maximum Rds On at Id,Vgs 40 mOhm @ 2.4A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SC-74, SOT-457
Win Source Part Number 1089703-PMN34UP,115
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PMN34UP,115 CAD Model

Description

The Nexperia USA Inc. PMN34UP,115 is a P-channel MOSFET that is designed for use in discrete semiconductor products.

  • Package: reel - TR
  • Mounting Technology: SMD (SMT)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 5A @ 25°C
  • Gate-Source Threshold Voltage: 950mV @ 250μA
  • Maximum Rds On: 40 mOhm @ 2.4A, 4.5V
  • Maximum Power Dissipation: 540mW (Ta), 6.25W (Tc)
  • Temperature Range: -55°C to 150°C (TJ)
  • Maximum Input Capacitance: 1950pF @ 10V

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