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Same model may have multiple batches, images only for reference.
PMV50UPE,215 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PMV50UPE,215

Part No PMV50UPE,215
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 3.2A TO-236AB
Datasheet
PMV50UPE,215 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 900mV @ 250μA
Max Gate Charge 15.7nC @ 4.5V
Max Input Capacitance 24pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 66 mOhm @ 3.2A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-236AB (SOT23)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1089799-PMV50UPE,215
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PMV50UPE,215 CAD Model

Description

The Nexperia PMV50UPE,215 is a P-channel MOSFET in a TO-236AB (SOT23) package.

  • Power Dissipation: 500mW
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 3.2A
  • Gate-Source Threshold Voltage @ 250μA: 900mV
  • Maximum Gate Charge @ 4.5V: 15.7nC
  • Maximum Input Capacitance @ 10V: 24pF

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