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Same model may have multiple batches, images only for reference.
PMXB56ENZ Real Image
Same model may have multiple batches, images only for reference.

PMXB56ENZ

Part No PMXB56ENZ
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 3.2A DFN1010D-3G
Datasheet
PMXB56ENZ Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 6.3nC @ 10V
Max Input Capacitance 209pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 400mW (Ta), 8.33W (Tc)
Maximum Rds On at Id,Vgs 55 mOhm @ 3.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DFN1010D-3
Dimension 3-XDFN Exposed Pad
Win Source Part Number 1089811-PMXB56ENZ
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PMXB56ENZ CAD Model

Description

The PMXB56ENZ is an N-channel MOSFET manufactured by Nexperia USA Inc.

  • Package: DFN1010D-3 with exposed pad
  • Maximum Power Dissipation: 400mW (Ta), 8.33W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 3.2A @ 25°C
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 6.3nC @ 10V
  • Input Capacitance: 209pF @ 15V
  • Supply and Demand: sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $14.5523 $58.2092
9+ $11.9403 $107.4627
13+ $11.5672 $150.3736
18+ $11.1941 $201.4938
24+ $10.8209 $259.7016
31+ $9.7015 $300.7465
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