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Same model may have multiple batches, images only for reference.
PMZB290UNE2YL Real Image
Same model may have multiple batches, images only for reference.

PMZB290UNE2YL

Part No PMZB290UNE2YL
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 1.2A XQFN3
Datasheet
PMZB290UNE2YL Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Gate-Source Threshold Voltage 950mV @ 250μA
Max Gate Charge 1.4nC @ 4.5V
Max Input Capacitance 46pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 350mW (Ta), 5.43W (Tc)
Maximum Rds On at Id,Vgs 320 mOhm @ 1.2A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DFN1006B-3
Dimension 3-XFDFN
Win Source Part Number 1089821-PMZB290UNE2YL
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PMZB290UNE2YL CAD Model

Description

The Nexperia PMZB290UNE2YL is a N-channel MOSFET transistor designed for use in discrete semiconductor products.

  • Category: Discrete Semiconductor Products
  • Channel Type: N-Channel
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 1.2A @ 25°C
  • Maximum Rds On @ Id, Vgs: 320 mOhm @ 1.2A and 4.5V
  • Gate-Source Threshold Voltage: 950mV @ 250μA
  • Maximum Gate Charge: 1.4nC @ 4.5V
  • Maximum Input Capacitance: 46pF @ 10V
  • Maximum Gate-Source Voltage: ±8V
  • Package: DFN1006B-3
  • Operating Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
285+ $0.1767 $50.3595
605+ $0.1655 $100.1275
940+ $0.1599 $150.3060
1,345+ $0.1487 $200.0015
1,750+ $0.1431 $250.4250
2,185+ $0.1376 $300.6560
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