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Same model may have multiple batches, images only for reference.
PSMN008-75B,118 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PSMN008-75B,118

Part No PSMN008-75B,118
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 75A D2PAK
Datasheet
PSMN008-75B,118 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 122.8nC @ 10V
Max Input Capacitance 5260pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 230W (Tc)
Maximum Rds On at Id,Vgs 8.5 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1090317-PSMN008-75B,118
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian PSMN008-75B,118 CAD Model

Description

The Nexperia USA Inc. PSMN008-75B,118 is a MOSFET transistor that is designed to operate in N-channel polarity.

  • Maximum Power Dissipation: 230W (Tc)
  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current @ 25°C: 75A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Maximum Gate Charge: 122.8nC @ 10V
  • Maximum Input Capacitance: 5260pF @ 25V
  • Package: D2PAK
  • Mounting: SMD (SMT) technology
  • Category: Discrete Semiconductor Products

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