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Same model may have multiple batches, images only for reference.
PSMN070-200P,127 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PSMN070-200P,127

Part No PSMN070-200P,127
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 35A TO220AB
Datasheet
PSMN070-200P,127 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 77nC @ 10V
Max Input Capacitance 4570pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 250W (Tc)
Maximum Rds On at Id,Vgs 70 mOhm @ 17A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1090360-PSMN070-200P,127
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PSMN070-200P,127 CAD Model

Description

The PSMN070-200P,127 is a power MOSFET manufactured by Nexperia USA Inc.

  • Polarity: N-channel
  • Application: Power supplies, motor control, and lighting
  • Maximum Power Dissipation: 250W
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 35A

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