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PSMN1R0-25YLDX

Part No PSMN1R0-25YLDX
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 100A LFPAK56  /  N-Channel 25 V 100A (Tc) 160W (Tc) Surface Mount LFPAK56, Power-SO8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Nexperia USA Inc.
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 0.89mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 71.8 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5308 pF @ 12 V
FET Feature Schottky Diode (Body)
Power Dissipation (Max) 160W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package LFPAK56, Power-SO8
Package / Case SC-100, SOT-669
Base Product Number PSMN1R0
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 568-12927-6-ND,568-12927-6,568-12927-2-ND,1727-2495-6,568-12927-1-ND,568-12927-1,1727-2495-1,1727-2495-2,568-12927-2,934069908115
Standard Package 1,500
Win Source Part Number 1086139-PSMN1R0-25YLDX
Ultra Librarian 3D Model Ultra Librarian PSMN1R0-25YLDX CAD Model

Description

The PSMN1R0-25YLDX is an N-channel MOSFET with a drain-source voltage of 25V and a continuous drain current of 100A @ 25°C.

  • Rds On: 0.89mOhm @ 25A and 10V
  • Gate Charge: 71.8 nC @ 10V
  • Package: SC-100, SOT-669
  • Power Dissipation: Up to 160W
  • Schottky Diode: Yes
  • Maximum Gate-Source Voltage: ±20V

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.1896 $65.6880
65+ $1.7967 $116.7855
100+ $1.7406 $174.0600
140+ $1.6845 $235.8300
180+ $1.6282 $293.0760
240+ $1.4598 $350.3520
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Prices are subject to market and will be confirmed after the order is placed.
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Availability: 7,420 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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