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Same model may have multiple batches, images only for reference.
PSMN1R8-40YLC,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PSMN1R8-40YLC,115

Part No PSMN1R8-40YLC,115
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 100A LFPAK
Datasheet
PSMN1R8-40YLC,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1.95V @ 1mA
Max Gate Charge 96nC @ 10V
Max Input Capacitance 6680pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 272W (Tc)
Maximum Rds On at Id,Vgs 1.8 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK56, Power-SO8
Dimension SC-100, SOT-669
Win Source Part Number 1090381-PSMN1R8-40YLC,115
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian PSMN1R8-40YLC,115 CAD Model

Description

The Nexperia USA Inc. PSMN1R8-40YLC,115 is an N-channel MOSFET transistor manufactured by Nexperia USA Inc..

  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 100A (Tc)
  • Rds On: 1.8 mOhm @ 25A, 10V
  • Gate-Source Voltage: ±20V
  • Gate Charge: 96nC @ 10V
  • Supply and Demand: limited
  • Package: LFPAK56, Power-SO8
  • Dimension: SC-100, SOT-669

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