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Same model may have multiple batches, images only for reference.
PSMN3R3-60PLQ Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PSMN3R3-60PLQ

Part No PSMN3R3-60PLQ
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 130A TO-220
Datasheet
PSMN3R3-60PLQ Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.1V @ 1mA
Max Gate Charge 95nC @ 5V
Max Input Capacitance 10115pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 293W (Tc)
Maximum Rds On at Id,Vgs 3.4 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1090403-PSMN3R3-60PLQ
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PSMN3R3-60PLQ CAD Model

Description

The Nexperia PSMN3R3-60PLQ is an N-channel MOSFET with a drain-source breakdown voltage of 60V and a continuous drain current of 130A at 25°C.

  • Manufacturer: Nexperia
  • Channel Type: N-channel MOSFET
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current @ 25°C: 130A
  • Power Dissipation: 293W
  • Maximum Rds On: 3.4 mOhm @ 25A, 10V
  • Gate-Source Threshold Voltage: 2.1V @ 1mA
  • Maximum Gate Charge: 95nC @ 5V
  • Maximum Input Capacitance: 10115pF @ 25V
  • Operating Temperature: -55°C to 175°C
  • Package: TO-220AB
  • Dimensions: TO-220-3
  • Application: Discrete semiconductor products

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