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Same model may have multiple batches, images only for reference.
PUMD10,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PUMD10,115

Part No PUMD10,115
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN/PNP PREBIAS 6TSSOP
Datasheet
PUMD10,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 100 @ 10mA, 5V
Max Vce (sat) 100mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 230MHz
Maximum Power Dissipation 300mW
Mounting SMD (SMT)
Case / Package 6-TSSOP
Win Source Part Number 1090704-PUMD10,115
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian PUMD10,115 CAD Model

Description

The PUMD10,115 is a pre-biased dual NPN and PNP transistor with a maximum current collector of 100mA.

  • Manufacturer: Nexperia
  • Maximum Current Collector: 100mA
  • Maximum Power Dissipation: 300mW
  • Case/Package: 6-TSSOP
  • Frequency Transition: 230MHz
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Collector Cut-off Current: 100nA (ICBO)
  • Typical Gain (hFE): 100 @ 10mA, 5V
  • Max Vce (sat): 100mV @ 250μA, 5mA

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Pricing & Ordering

Quantity Unit Price Ext. Price
425+ $0.1179 $50.1075
905+ $0.1105 $100.0025
1,405+ $0.1068 $150.0540
2,015+ $0.0993 $200.0895
2,620+ $0.0956 $250.4720
3,270+ $0.0918 $300.1860
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