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Same model may have multiple batches, images only for reference.
PUMD4,115
Same model may have multiple batches, images only for reference.

PUMD4,115

Part No PUMD4,115
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS PREBIAS 1NPN 1PNP 6TSSOP
Datasheet
PUMD4,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays, Pre-Biased
Mfr Nexperia USA Inc.
Series -
Package Tape & Reel
Product Status Active
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 10kOhms
Resistor - Emitter Base (R2) -
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 1µA
Frequency - Transition -
Power - Max 300mW
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package 6-TSSOP
Base Product Number PUMD4
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1376955-PUMD4,115
Ultra Librarian 3D Model Ultra Librarian PUMD4,115 CAD Model

Description

The PUMD4 is a dual pre-biased transistor array designed for use in discrete semiconductor products.

  • Category: Bipolar Transistor Arrays
  • Manufacturer: Nexperia USA Inc.
  • Package: 6-TSSOP
  • Mounting: Surface Mountable
  • Maximum Collector Current: 100mA
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Base Resistor: 10kOhms
  • DC Current Gain: 200 @ 1mA and 5V
  • Vce Saturation: 150mV @ 500µA and 10mA
  • Maximum Collector Cutoff: 1µA
  • REACH: Unaffected
  • Product Status: Active
  • Power Rating: 300mW

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