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PUMT1,115

Part No PUMT1,115
Manufacturer Nexperia USA Inc.
Catalog RF Transistors (BJT)
Description TRANS 2PNP 40V 0.1A 6TSSOP  /  Bipolar (BJT) Transistor Array 2 PNP (Dual) 40V 100mA 100MHz 300mW Surface Mount 6-TSSOP
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays
Mfr Nexperia USA Inc.
Package Tape & Reel
Transistor Type 2 PNP (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 40V
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 6V
Power - Max 300mW
Frequency - Transition 100MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package 6-TSSOP
Base Product Number PUMT1
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Other Names PUMT1 T/R,PUMT1,115-ND,568-11288-6,568-11288-2,1727-1745-1,568-11288-1,1727-1745-2,934034200115,1727-1745-6,PUMT1 T/R-ND,568-11288-2-ND,568-11288-6-ND,568-11288-1-ND
Standard Package 3,000
Win Source Part Number 1086362-PUMT1,115
Ultra Librarian 3D Model Ultra Librarian PUMT1,115 CAD Model

Description

The Nexperia USA Inc. PUMT1,115 Bipolar Transistor Array is a dual PNP transistor that has a maximum power of 300mW.

  • Power (Max): 300mW
  • Collector-Emitter Breakdown Voltage (Max): 40V
  • Collector Current (Max): 100mA
  • Collector Cutoff Current: 100nA
  • DC Current Gain: 120 @ 1mA and 6V
  • Frequency Transition: 100MHz
  • Package: 6-TSSOP, SC-88, SOT-363

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Pricing & Ordering

Quantity Unit Price Ext. Price
470+ $0.1233 $57.9510
1,145+ $0.1012 $115.8740
1,770+ $0.0981 $173.6370
2,440+ $0.0949 $231.5560
3,150+ $0.0917 $288.8550
4,215+ $0.0822 $346.4730
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Availability: 72,000 pieces
MOQ: 470 pcs
Order Increment : 1 pcs
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