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2N7002K,215

Part No 2N7002K,215
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 340MA TO236AB / N-Channel 60 V 340mA (Ta) 830mW (Ta) Surface Mount SOT-23 (TO-236AB)
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr NXP
Series TrenchMOS™
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 340mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.9Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Vgs (Max) ±15V
Input Capacitance (Ciss) (Max) @ Vds 40 pF @ 10 V
Power Dissipation (Max) 830mW (Ta)
Temperature Range - Operating -65°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23 (TO-236AB)
Package / Case TO-236-3, SC-59, SOT-23-3
Base Product Number 2N70
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 906293-2N7002K,215
Ultra Librarian 3D Model Ultra Librarian 2N7002K,215 CAD Model

Description

Product Overview: 2N7002K,215 - NXP Semiconductors

The 2N7002K,215 is a high-performance, small-signal N-channel field-effect transistor (FET) produced by NXP Semiconductors. This MOSFET is designed for use in a wide range of applications, from power management to switching. Its compact SOT-23 package makes it suitable for space-constrained applications, while its robust design ensures reliable performance in demanding environments.

Key Features

  • Device Type: N-Channel MOSFET
  • Package Type: SOT-23, a small and versatile package ideal for surface-mount technology (SMT).
  • Drain-Source Voltage (Vdss): 60V, providing a good balance between performance and breakdown voltage.
  • Continuous Drain Current (Id): 300mA, suitable for a range of light to moderate current applications.
  • RDS(on): This device boasts a low on-state resistance, which translates to reduced power losses and improved efficiency.
  • High-Speed Switching: The 2N7002K,215 is designed for fast switching applications, making it ideal for high-frequency circuits.
  • Gate Threshold Voltage: Low threshold voltage allows the device to be easily driven by logic-level voltages, simplifying circuit design.

Application Areas

The versatile nature of the 2N7002K,215 MOSFET makes it suitable for a variety of applications, including:

  • Power management in portable and battery-powered devices
  • Load switch circuits
  • DC/DC converters
  • Motor control systems
  • LED lighting drivers
  • Logic level conversion circuits

Quality and Reliability

NXP Semiconductors is known for its commitment to quality and the 2N7002K,215 is no exception. It is designed to meet stringent industry standards, ensuring high reliability and performance. The device also features protection against electrostatic discharge (ESD), further enhancing its robustness and longevity in various applications.

Environmental Compliance

The 2N7002K,215 complies with RoHS directives, making it an environmentally friendly choice for manufacturers looking to create green products. Its lead-free construction and compliance with current environmental standards underscore NXP's dedication to sustainability.

In summary, the 2N7002K,215 from NXP Semiconductors is a reliable and efficient solution for designers seeking a compact, high-performance N-channel MOSFET for a wide array of electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,220+ $0.0474 $57.8280
2,945+ $0.0393 $115.7385
4,550+ $0.0381 $173.3550
6,250+ $0.0370 $231.2500
8,065+ $0.0358 $288.7270
10,715+ $0.0323 $346.0945
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 50,000 pieces
MOQ: 1220 pcs
Order Increment : 1 pcs
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