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A3G35H100-04SR3

Part No A3G35H100-04SR3
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description A3G35H100-04 - 3400-3600 MHz, 14 / RF Mosfet 48 V 80 mA 3.4GHz ~ 3.6GHz 14dB @ 3.6GHz 14W NI-780S-4L
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs
Mfr NXP
Package Bulk
Product Status Active
Technology GaN
Configuration 2 N-Channel
Frequency 3.4GHz ~ 3.6GHz
Gain 14dB @ 3.6GHz
Voltage - Test 48 V
Current - Test 80 mA
Power - Output 14W
Voltage - Rated 125 V
Mounting Type Surface Mount
Package / Case NI-780S-4L
Supplier Device Package NI-780S-4L
Standard Package 4 pcs
Win Source Part Number 1042169-A3G35H100-04SR3
Ultra Librarian 3D Model Ultra Librarian A3G35H100-04SR3 CAD Model

Description

The A3G35H100-04SR3 is a state-of-the-art RF power transistor designed and manufactured by NXP Semiconductors, a leader in the electronics industry. This high-performance product is tailored for demanding applications that require robust and reliable RF power amplification.

Key Features

  • Frequency Range: The A3G35H100-04SR3 operates efficiently over a broad frequency range, making it versatile for various applications in the RF domain.
  • High Output Power: Engineered to deliver exceptional output power, this transistor is ideal for high-power applications that necessitate strong signal amplification.
  • Efficiency: With a design focused on energy efficiency, this device provides excellent performance while minimizing power losses, thus ensuring a greener and cost-effective solution.
  • Thermal Management: The product features an advanced thermal management system that ensures stable operation even under high temperature conditions, contributing to its reliability and longevity.
  • Ruggedness: Built to withstand harsh conditions, the A3G35H100-04SR3 is highly rugged and durable, suitable for both commercial and industrial applications that demand high resilience.

Applications

The A3G35H100-04SR3 is ideal for a wide range of applications, including but not limited to:

  • Broadcast transmitters
  • Cellular base station amplifiers
  • RF energy applications
  • Industrial, scientific, and medical (ISM) applications
  • High-frequency particle accelerators

Product Specifications

Constructed with NXP's innovative LDMOS technology, the A3G35H100-04SR3 is designed to meet the highest specifications for efficiency, gain, and thermal performance. It is housed in a compact package that ensures easy integration into a wide array of systems without compromising on power or performance.

Quality and Support

NXP Semiconductors is committed to delivering high-quality products. The A3G35H100-04SR3 is backed by NXP's comprehensive technical support and reliability assurance, ensuring that customers receive the best possible experience from prototype to production.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $104.1126 $104.1126
2+ $100.8591 $201.7182
3+ $97.6056 $292.8168
4+ $94.3521 $377.4084
5+ $84.5915 $422.9575
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,000 pieces
Order Increment : 1 pcs
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