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AFT09MS007NT1

Part No AFT09MS007NT1
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 30V 870MHZ PLD1.5W / High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer NXP USA Inc.
Packaging Reel
Transistor Type LDMOS
Frequency 870MHz
Gain 15.2dB
Voltage - Test 7.5V
Current - Test 100mA
Power - Output 7.3W
Voltage - Rated 30V
Manufacturer Package PLD-1.5W
Supplier Device Package PLD-1.5W
Manufacturer Pack Quantity 1,000
MSL Level 3 (168 Hours)
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 809005-AFT09MS007NT1
Ultra Librarian 3D Model Ultra Librarian AFT09MS007NT1 CAD Model

Description

Introducing the AFT09MS007NT1 RF Power Transistor from NXP

The AFT09MS007NT1 is a high-performance RF power transistor designed by NXP Semiconductors, a leader in innovative high-performance mixed-signal solutions. This device is part of NXP's renowned Airfast product line, which is engineered to deliver exceptional RF power performance for a wide range of applications. The AFT09MS007NT1 is specifically tailored for mobile two-way radio applications, providing reliable and efficient power amplification.

Key Features of the AFT09MS007NT1:

  • Frequency Range: The AFT09MS007NT1 operates over a broad frequency range, making it versatile for various communication bands.
  • High Output Power: It is capable of delivering a high output power, which ensures strong signal transmission for clear and reliable communication.
  • High Gain: The transistor exhibits high gain, which translates to improved signal strength and quality without the need for additional amplification stages.
  • Efficiency: With its advanced design, the AFT09MS007NT1 offers high efficiency, reducing power consumption and heat generation, which is crucial for battery-powered devices.
  • Ruggedness: Durability is a key aspect of this device, with its rugged construction ensuring consistent performance even under stressful conditions.
  • Thermal Performance: Excellent thermal performance is achieved through the use of enhanced packaging, which helps to maintain stability and longevity of the device.

Applications:

The AFT09MS007NT1 is ideal for a range of applications, particularly in the field of mobile two-way radios, including:

  • Public safety radios
  • Professional mobile radios (PMR)
  • Land mobile radios (LMR)
  • Commercial two-way radios

Quality and Reliability:

NXP's commitment to quality is evident in the AFT09MS007NT1, which is manufactured to meet the highest industry standards for reliability and performance. It is designed to withstand the rigors of daily use in professional communication environments, ensuring long-term reliability.

In summary, the AFT09MS007NT1 from NXP is a robust, high-performance RF power transistor that offers a combination of power, efficiency, and reliability, making it an excellent choice for enhancing mobile two-way radio systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $29.1045 $58.2090
5+ $23.8806 $119.4030
7+ $23.1344 $161.9408
9+ $22.3881 $201.4929
12+ $21.6418 $259.7016
16+ $19.4030 $310.4480
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,000 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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