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AFT09MS031NR1

Part No AFT09MS031NR1
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 40V 870MHZ TO-270-2  /  RF Mosfet LDMOS 13.6 V 500 mA 870MHz 17.2dB 31W TO-270-2
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - RF
Mfr NXP USA Inc.
Package Tape & Reel
Transistor Type LDMOS
Frequency 870MHz
Gain 17.2dB
Voltage - Test 13.6 V
Current - Test 500 mA
Power - Output 31W
Voltage - Rated 40 V
Package / Case TO-270AA
Supplier Device Package TO-270-2
Base Product Number AFT09
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names AFT09MS031NR1CT,AFT09MS031NR1DKR,AFT09MS031NR1TR,935314747528
Standard Package 500
Win Source Part Number 1032076-AFT09MS031NR1
Ultra Librarian 3D Model Ultra Librarian AFT09MS031NR1 CAD Model

Description

Introducing the AFT09MS031NR1 RF Power Transistor from NXP

The AFT09MS031NR1 is a state-of-the-art RF power transistor designed by NXP Semiconductors, a leader in the field of high-performance mixed-signal electronics. This device is specifically engineered to deliver outstanding performance in high-frequency applications, making it an ideal choice for a wide range of RF energy solutions.

Constructed with NXP's advanced LDMOS technology, the AFT09MS031NR1 offers a high level of ruggedness and reliability. It operates at a frequency range of 136 to 941 MHz, providing a versatile solution for various RF applications. With an excellent thermal performance, this transistor can handle a power output of up to 31 Watts while maintaining high efficiency, which is crucial for applications requiring consistent and stable power delivery.

Key Features of the AFT09MS031NR1:

      
  • Frequency Range: 136-941 MHz, catering to a broad spectrum of RF applications.
  •   
  • Power Output: Capable of delivering up to 31 Watts, ensuring substantial power for demanding operations.
  •   
  • High Efficiency: Designed for optimal power efficiency, reducing energy consumption and heat generation.
  •   
  • Ruggedness: LDMOS technology provides exceptional ruggedness, allowing the device to withstand harsh conditions.
  •   
  • Thermal Performance: Superior thermal management for improved reliability and longevity.

With its robust design, the AFT09MS031NR1 is particularly suitable for applications such as land mobile radio, commercial and industrial systems, and RF energy uses including cooking, defrosting, and medical applications. It is also a perfect fit for amateur radio enthusiasts looking for a reliable and efficient power transistor.

NXP's commitment to quality ensures that the AFT09MS031NR1 meets the highest standards of performance and durability. The device comes in a compact over-molded plastic package, which not only reduces the overall footprint but also simplifies the assembly process, making it a cost-effective solution for mass-market production.

Whether you're designing high-powered RF systems or looking to enhance your current setup, the AFT09MS031NR1 by NXP provides the performance, efficiency, and reliability you need to take your applications to the next level.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $43.6568 $87.3136
3+ $35.8209 $107.4627
5+ $34.7015 $173.5075
6+ $33.5821 $201.4926
8+ $32.4627 $259.7016
11+ $29.1045 $320.1495
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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