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BF1208D,115

Part No BF1208D,115
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH DUAL GATE SOD666 / Trans RF MOSFET N-CH 6V 0.03A 6-Pin SOT-666 T/R
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel package
Part Status Obsolete(EOL)
Transistor Type N-Channel Dual Gate
Frequency 400MHz
Gain 32dB
Voltage - Test 5V
Current Rating 30mA
Noise Figure 0.9dB
Current - Test 19mA
Voltage Rating DC 6V
Package SOT-563, SOT-666
Manufacturer Package SOT-666
Win Source Part Number 769961-BF1208D,115
Popularity Medium
Supply and Demand Status Limited
Family Name BF1208D
Introduction Date May 16, 2007
ECCN EAR99
Country of Origin China, Thailand
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian BF1208D,115 CAD Model

Description

The BF1208D,115 is a state-of-the-art dual N-channel silicon MOSFET from NXP Semiconductors, designed to deliver high performance and reliability for a wide range of applications. This product is part of NXP's extensive portfolio of MOSFETs that are known for their efficiency and power management capabilities.

Key Features

  • Device Type: Dual N-Channel MOSFET
  • Package: 6-pin, SOT363 small surface-mounted device (SMD)
  • Drain-Source Voltage (Vds): 12V, providing a good balance between performance and energy efficiency.
  • Continuous Drain Current (Id): 30 mA, suitable for signal processing and small signal switching.
  • Gate-Source Voltage (Vgs): ±8V, offering flexibility for various circuit designs.
  • Low On-Resistance (Rds(on)): This feature ensures minimal power loss and heat generation, enhancing the overall efficiency of the device.
  • High-Speed Switching: The MOSFET is optimized for high-speed switching applications, making it ideal for high-frequency operations.

Applications

The BF1208D,115 is well-suited for a range of electronic applications, including but not limited to:

  • RF amplifiers and oscillators
  • Mixers and modulators
  • Low-noise input stages for receivers
  • High-speed digital switches
  • Power management in portable and battery-powered devices

Quality and Reliability

NXP Semiconductors is renowned for its commitment to quality and reliability. The BF1208D,115 MOSFET is built to meet the highest industry standards, ensuring stable performance over its lifespan. It features protection against electrostatic discharge (ESD) and is compliant with the RoHS directive, making it an environmentally friendly choice for electronic manufacturers.

Conclusion

With its compact form factor, efficient power handling, and fast switching capabilities, the BF1208D,115 from NXP is an excellent choice for designers looking to optimize their electronic circuits. Whether it's used in communication devices, consumer electronics, or industrial systems, this MOSFET is engineered to provide reliable and efficient performance.

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