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BF370

Part No BF370
Manufacturer NXP / Nexperia
Catalog Transistors (BJT) - Single
Description TRANS NPN 15V 0.1A SOT54
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Bulk
Status Obsolete(EOL)
Transistor Polarity NPN
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 15V
Collector Cut-off Current(Max) 400nA (ICBO)
Typical Gain (hFE) (Min) 40 @ 10mA, 1V
Maximum Power Dissipation 500mW
Frequency - Transition 500MHz
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-92-3
Win Source Part Number 049516-BF370
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BF370 CAD Model

Description

The NXP BF370 is a high-performance NPN bipolar RF transistor designed specifically for RF amplification and switching applications. This versatile component is a crucial element in a wide range of electronic devices, where reliable and efficient radio frequency performance is paramount.

Key Features

  • High Transition Frequency (fT): The BF370 boasts a high transition frequency, which makes it ideal for VHF and UHF applications where rapid switching is required.
  • Low Noise Figure: Engineered to produce minimal noise during operation, this transistor ensures a clear signal, which is especially important in communication equipment.
  • High Power Gain: The device offers a high power gain, which allows for efficient signal amplification, leading to improved overall performance of the RF circuit.
  • Robust Construction: Enclosed in a durable package, the BF370 is built to withstand the demands of various operating conditions and environments.

Applications

The NXP BF370 transistor is well-suited for a variety of applications, including but not limited to:

  • RF amplifiers in telecommunication systems
  • Oscillator circuits in industrial and consumer electronics
  • RF signal generation and processing equipment
  • High-frequency switch circuits

Technical Specifications

Characteristic Value Configuration Single Transistor Polarity NPN Collector-Emitter Voltage (Vceo) 20V Collector-Base Voltage (Vcbo) 30V Emitter-Base Voltage (Vebo) 3V Collector Current (Ic) 30mA Power Dissipation (Pd) 300mW Operating Temperature Range -65°C to +150°C Package / Case TO-92

With its reliable performance and robust design, the NXP BF370 is an excellent choice for designers and engineers looking to enhance their RF applications. Whether for commercial or industrial use, this transistor is engineered to deliver consistent and dependable results.

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