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BF909A,215

Part No BF909A,215
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH SOT-143B
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity N-Channel Dual Gate
Frequency 800MHz
Current Rating 40mA
Noise Figure 2dB
Voltage Rating 7V
Case / Package SOT-143B
Win Source Part Number 114625-BF909A,215
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BF909A,215 CAD Model

Description

The BF909A,215 is a high-performance N-channel silicon junction field-effect transistor (JFET) designed and manufactured by NXP Semiconductors, a leader in the semiconductor industry. This particular JFET is well-suited for a wide range of applications, including high-frequency amplification and switching.

Key Features:

  • Low Noise Figure: With its optimized design, the BF909A,215 offers a low noise figure, making it ideal for sensitive RF amplification circuits and applications where signal integrity is crucial.
  • High Gain: The device provides high gain performance, which is essential for amplifying weak signals without significant loss of quality.
  • Low Leakage Current: It has a very low leakage current, enhancing the overall reliability and efficiency of the circuit.
  • High Cut-off Frequency: The high cut-off frequency (fT) of the BF909A,215 allows it to be used in applications that require operation at higher frequencies.
  • Surface-Mount Package: The transistor comes in a surface-mount package, which is suitable for automated assembly processes and helps in saving space on printed circuit boards (PCBs).

Applications:

The NXP BF909A,215 JFET is versatile and can be used in various electronic applications, including:

  • RF amplifiers and oscillators
  • Mixers and modulators
  • Low-noise audio amplification
  • High-speed switches
  • Buffer stages in communication systems
  • Analog circuitry requiring high input impedance

Specifications:

Parameter Value Drain-Source Voltage (Vds) 12V Gate-Source Voltage (Vgs) 8V Drain Current (Id) 10mA Power Dissipation (Pd) 300mW Operating Temperature Range -65°C to +150°C

The BF909A,215 from NXP Semiconductors is an exceptional choice for designers seeking a reliable, high-performance JFET for their next project. Its specifications and features ensure it can meet the demands of a variety of sophisticated electronic applications.

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