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BFG424W,115

Part No BFG424W,115
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description TRANS NPN 10V 30MA SOT343R / High Reliability RF BJT IC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel package
Part Status Obsolete(EOL)
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Maximum) 4.5V
Frequency - Transition 25GHz
Noise Figure (dB Typ @ f) 0.8dB ~ 1.2dB @ 900MHz ~ 2GHz
Gain 22dB
Power - Max 135mW
DC Current Gain (hFE) (Minimum) @ Ic, Vce 50 @ 25mA, 2V
Current - Collector (Ic) (Maximum) 30mA
Operating Temperature Range 150°C (TJ)
Mounting SMD
Package SC-82A, SOT-343
Manufacturer Package CMPAK-4
Win Source Part Number 769978-BFG424W,115
Popularity Medium
Supply and Demand Status Limited
Family Name BFG424W
Introduction Date March 21, 2006
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian BFG424W,115 CAD Model

Description

Introducing the BFG424W,115 - A Superior RF Bipolar Transistor from NXP

The BFG424W,115 is a cutting-edge RF bipolar transistor designed and manufactured by NXP Semiconductors, a leader in the semiconductor industry. This high-performance transistor is specially crafted for applications requiring low noise figures and high gain at high frequencies. The BFG424W,115 is an ideal choice for a wide range of applications, including but not limited to RF amplifiers, oscillators, and mixers in the VHF and UHF frequency ranges.

Key Features of the BFG424W,115

  • High Transition Frequency (fT): With a transition frequency of 10 GHz, the BFG424W,115 is optimized for high-speed signal processing, making it an excellent choice for advanced RF designs.
  • Low Noise Figure: The device boasts a low noise figure, which is crucial for maintaining signal integrity in communication systems and sensitive RF applications.
  • High Power Gain: The transistor provides high power gain, ensuring efficient signal amplification and improved overall performance of the RF circuit.
  • Wide Voltage Range: It operates within a wide voltage range, offering flexibility and compatibility with various circuit designs.
  • Robustness: NXP's commitment to quality means the BFG424W,115 is built to be durable and reliable, capable of withstanding the rigors of demanding RF environments.

Applications of the BFG424W,115

The versatility of the BFG424W,115 allows it to be used in a variety of applications. It's particularly well-suited for:

  • Telecommunication systems
  • Global Positioning Systems (GPS)
  • Wireless LANs and broadband access networks
  • Professional mobile radio
  • Satellite communications

With its superior performance characteristics, the BFG424W,115 from NXP is an excellent choice for designers and engineers looking to enhance their RF circuits. Its reliability and efficiency make it a valuable component in any high-frequency application where signal clarity and amplification are paramount.

Whether you're designing consumer electronics, commercial communication systems, or specialized RF equipment, the BFG424W,115 offers the performance and quality that NXP Semiconductors is known for. Upgrade your designs with this exceptional RF bipolar transistor and experience the difference in your applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
185+ $0.3128 $57.8680
455+ $0.2566 $116.7530
700+ $0.2487 $174.0900
960+ $0.2407 $231.0720
1,245+ $0.2326 $289.5870
1,665+ $0.2086 $347.3190
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Availability: 370 pieces
MOQ: 185 pcs
Order Increment : 1 pcs
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