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BLF6G27LS-75.118

Part No BLF6G27LS-75.118
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description Trans Mosfet N-ch 65V 18A 3-PIN Ldmost T/r
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 18 A
Current Rating 18 A
Drain to Source Breakdown Voltage 65 V
Drain to Source Voltage (Vdss) 65 V
Element Configuration Single
Frequency 2.7 GHz
Gain 17 dB
Gate to Source Voltage (Vgs) 13 V
Max Frequency 2.7 GHz
Max Operating Temperature 200 °C
Max Output Power 75 W
Min Operating Temperature -65 °C
Mount Surface Mount
Number of Elements 1
Number of Pins 3
Output Power 9 W
Packaging Tape and Reel
RoHS Compliant
Test Current 600 mA
Test Voltage 28 V
Voltage Rating 65 V
Win Source Part Number 1148191-BLF6G27LS-75.118
Categories Transistors - FETs, MOSFETs - RF
Manufacturer NXP
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BLF6G27LS-75.118 CAD Model

Description

The BLF6G27LS-75.118 is a state-of-the-art LDMOS transistor from NXP Semiconductors, designed specifically for high-efficiency RF power amplification. This product is part of NXP's renowned series of RF power transistors that are widely recognized for their outstanding performance in broadcast applications, particularly in the 2.6 GHz band.

Key Features

  • High Power: With an advanced LDMOS technology, this transistor is capable of delivering a powerful output of 75 watts, making it suitable for a range of high-power applications.
  • High Efficiency: The BLF6G27LS-75.118 is engineered for maximum efficiency, ensuring low energy consumption and reduced heat dissipation during operation.
  • Broadband Performance: It offers excellent broadband performance across a wide frequency range, making it versatile for various RF applications.
  • Integrated ESD Protection: The device includes built-in electrostatic discharge (ESD) protection, enhancing its reliability and longevity in challenging environments.
  • Thermal Stability: It is designed to maintain stable performance over a wide temperature range, ensuring consistent operation under varying conditions.

Applications

The BLF6G27LS-75.118 is ideal for a multitude of applications where high-power and efficiency are required. It is particularly well-suited for:

  • Telecommunication infrastructure such as base station amplifiers for cellular networks
  • Broadcast transmitters for television and radio
  • Industrial, scientific, and medical (ISM) applications
  • Professional and commercial RF power amplifiers

Quality and Reliability

As with all NXP products, the BLF6G27LS-75.118 is manufactured to the highest quality standards. It undergoes rigorous testing and quality control measures to ensure it meets the stringent requirements of the most demanding RF applications. The product is also RoHS compliant, adhering to environmental regulations and minimizing the use of hazardous substances.

For designers and engineers looking for a robust, high-performance LDMOS transistor, the BLF6G27LS-75.118 from NXP offers an excellent balance of power, efficiency, and reliability, making it a top choice for next-generation RF amplification needs.

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