The BUK6207-30C,118 is a high-performance, N-channel TrenchMOS™ standard level field-effect transistor (FET) designed and manufactured by NXP Semiconductors. This MOSFET is engineered to deliver efficient power control and conversion in a compact package, making it an ideal choice for a wide range of applications.

Key Features

• Device Type: N-channel TrenchMOS™ transistor
• Package: DPAK (TO-252) surface-mounted package
• Drain-Source Voltage (V<sub>ds): 30 V
• Continuous Drain Current (I<sub>d): 75 A
• R<sub>DS(on): Very low on-state resistance of 7.5 mΩ at V<sub>gs = 10 V
• Power Dissipation (P<sub>D): 110 W
• Operating Temperature: -55°C to +175°C
• Gate-Source Voltage (V<sub>gs): ±20 V

Applications

The BUK6207-30C,118 MOSFET is versatile and can be used in various applications, including:

• DC/DC converters
• Motor drives
• Power management systems
• Switching regulators
• Automotive systems and controls
• High-efficiency power supplies

Product Advantages

This MOSFET from NXP offers numerous advantages for designers and engineers:

• Its low on-state resistance minimizes conduction losses, enhancing overall system efficiency.
• The robust package ensures reliable operation in harsh environments and is suitable for high-density PCB layouts.
• With its high continuous current rating and power dissipation capabilities, it can handle demanding power applications with ease.
• The wide operating temperature range makes it suitable for industrial and automotive applications that require high reliability under extreme conditions.
• Fast switching performance enables efficient operation at high frequencies, which is critical for modern power conversion systems.

Quality and Reliability

NXP Semiconductors is known for its commitment to quality and reliability, and the BUK6207-30C,118 MOSFET is no exception. It is designed to meet stringent industry standards, ensuring a long operational life and consistent performance.