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BUK752R7-30B,127

Part No BUK752R7-30B,127
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 75A TO220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 91nC @ 10V
Max Input Capacitance 6212pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 2.7 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1025231-BUK752R7-30B,127
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian BUK752R7-30B,127 CAD Model

Description

Introducing the BUK752R7-30B,127 - High-Efficiency Power MOSFET

The BUK752R7-30B,127 is a cutting-edge power MOSFET brought to you by NXP Semiconductors, a leader in the field of high-performance mixed-signal electronics. This product is designed to cater to a wide range of applications that require efficient power management, including automotive systems, power supplies, and industrial automation. With its robust construction and advanced technology, the BUK752R7-30B,127 is engineered to deliver reliable and high-quality performance for your demanding applications.

Key Features

  • Low On-Resistance: This MOSFET features a very low on-state resistance (RDS(on)), which translates to reduced conduction losses and improved overall efficiency in your circuit.
  • High-Speed Switching: The device is capable of high-speed switching operations, making it suitable for high-frequency power conversion and regulation tasks.
  • Enhanced Thermal Performance: With an excellent thermal design, the BUK752R7-30B,127 ensures that heat is effectively dissipated, thus maintaining stability and prolonging the life of your system.
  • Robust Package: Encased in a TO-220AB package, the MOSFET is built to withstand mechanical stress and environmental factors, ensuring durability and reliability.

Electrical Characteristics

  • Drain-Source Voltage (VDS): 30V - This voltage rating suits a broad range of low to medium voltage applications.
  • Continuous Drain Current (ID): The device supports a high continuous drain current, indicative of its capability to handle significant power levels.
  • Gate-Source Voltage (VGS): The MOSFET is designed to operate within a standard gate-source voltage range, ensuring compatibility with common drive circuits.

Applications

  • Automotive electronics, such as engine control units and powertrain systems.
  • DC/DC converters and power management modules.
  • Motor control circuits in industrial automation systems.
  • Switch-mode power supplies (SMPS) for various electronic devices.

The BUK752R7-30B,127 from NXP is a testament to the company's commitment to providing high-performance and energy-efficient solutions. Whether you're designing a sophisticated automotive power system or a compact SMPS, this power MOSFET is engineered to exceed your expectations and deliver unparalleled performance.

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