The BUK7613-75B,118 is a high-performance, N-channel TrenchMOS™ standard level field-effect transistor (FET) designed and manufactured by NXP Semiconductors. This power MOSFET is well-suited for a wide range of applications, particularly in the automotive industry, where reliability and efficiency are of paramount importance.

Key Features

• Low On-State Resistance: The device features a very low on-state resistance (R<sub>DS(on)), which enhances its efficiency by minimizing conduction losses.
• High-Speed Switching: With its fast switching capabilities, BUK7613-75B,118 is ideal for high-frequency applications, ensuring minimal power loss and heat generation.
• Standard Level Gate Drive: This MOSFET operates with standard level gate drive voltages, making it compatible with a wide range of drive circuits and simplifying design considerations.
• Robust Thermal Management: The device is encapsulated in a TO-220AB package, which is known for its excellent thermal characteristics, enabling the MOSFET to handle high levels of power without overheating.
• Automotive Grade: Designed to meet the stringent requirements of the automotive industry, the BUK7613-75B,118 is AEC-Q101 qualified, ensuring reliability under harsh operating conditions.

Applications

The BUK7613-75B,118 is versatile and can be used in various applications, including but not limited to:

• DC/DC converters and power management systems
• Motor drives and controllers
• Automotive systems, such as engine control units and power distribution
• Load switches and battery protection circuits

Technical Specifications

Some of the key technical specifications of the BUK7613-75B,118 include:

• Drain-source voltage (V<sub>DS): 75V
• Continuous drain current (I<sub>D): 75A
• Power dissipation (P<sub>D): 110W
• Operating temperature range: -55°C to +175°C

For more detailed technical information, datasheets, and support documents, customers are advised to visit the official NXP Semiconductors website or contact their local NXP sales office.