The BUK7614-55A,118 is a high-performance, N-channel TrenchMOS™ standard level field-effect transistor (FET) designed and manufactured by NXP Semiconductors. This versatile component is well-suited for a wide range of applications, including automotive, power management, and industrial systems. With its robust design and efficient power handling capabilities, the BUK7614-55A,118 is engineered to deliver reliable performance in demanding environments.
Key Features
- Low On-Resistance: The device features a low on-state resistance (R<sub>DS(on)), which minimizes power losses and improves overall efficiency during operation.
- High-Speed Switching: Its fast switching capabilities enable high-frequency operation, making it suitable for applications that require quick response times.
- Standard Level Gate Drive: The FET can be driven by standard level logic signals, simplifying the design of the drive circuitry.
- Robust Thermal Performance: The BUK7614-55A,118 boasts excellent thermal characteristics, ensuring stable performance even under high temperature conditions.
- Surface-Mount Package: The device comes in a surface-mount package (D2PAK), which is ideal for space-constrained applications and allows for efficient heat dissipation.
Applications
- DC/DC converters
- Motor drives
- Power management systems
- Load switches
- Automotive applications
Product Specifications
Parameter
Value
Drain-Source Voltage (V<sub>DS)
55 V
Continuous Drain Current (I<sub>D)
75 A
Power Dissipation (P<sub>D)
110 W
R<sub>DS(on)
8.5 mΩ
Package
D2PAK
The BUK7614-55A,118 by NXP Semiconductors is a testament to the company's commitment to providing high-quality, durable, and efficient power solutions. Whether for automotive electronics, power supply designs, or industrial automation, this MOSFET stands out as a reliable choice for engineers and designers looking to optimize their systems for performance and longevity.