The BUK7619-100B,118 is a high-performance, N-channel TrenchMOS™ standard level field-effect transistor (FET) designed and manufactured by NXP Semiconductors. This power MOSFET is an essential component in modern electronic systems, offering efficient power conversion and management within a compact package. Its robust design and advanced technology make it suitable for a wide range of applications, from automotive to industrial and power management systems.

Key Features

• Device Type: Power MOSFET
• Channel Type: N-Channel
• Drain-Source Voltage (V<sub>DS): 100V
• Continuous Drain Current (I<sub>D): 75A
• R<sub>DS(on): Low on-state resistance for improved efficiency
• Configuration: Single
• Package: D2PAK (TO-263)
• Qualification: Standard industrial qualifications

Applications

The BUK7619-100B,118 is versatile and can be used in various applications, including:

• DC/DC converters
• Motor drives
• Power management circuits
• Switching regulators
• Automotive systems
• Load switches

Performance Benefits

With its low on-state resistance and high current handling capabilities, the BUK7619-100B,118 ensures minimal power loss and heat generation, which is crucial for maintaining efficiency and reliability in electronic systems. Its rapid switching speeds contribute to better performance in high-frequency applications.

Quality and Reliability

NXP Semiconductors is known for its commitment to quality, and the BUK7619-100B,118 is no exception. It is produced with stringent quality control measures and is designed to meet or exceed industry standards for performance and reliability.

Environmental Considerations

The BUK7619-100B,118 is RoHS compliant, ensuring that it meets global environmental standards by avoiding the use of hazardous substances in its construction.