The BUK764R3-40B,118 is a high-performance, N-channel TrenchMOS™ standard level field-effect transistor (FET) designed and manufactured by NXP Semiconductors. This product is part of NXP's extensive portfolio of power management solutions, which are known for their efficiency, reliability, and robustness in a wide array of applications.

Key Features

• Low On-State Resistance: The BUK764R3-40B,118 boasts a very low on-state resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved overall efficiency in power conversion applications.
• High-Speed Switching: Engineered for fast switching performance, this MOSFET can handle high-frequency operations, making it suitable for modern, high-speed power switching applications.
• Standard Level Gate Drive: The device is compatible with standard level gate drive voltages, allowing for ease of integration into various circuit designs without the need for additional level shifters or drive circuits.
• Robust Thermal Performance: With an excellent thermal design, the BUK764R3-40B,118 can operate reliably at higher temperatures, ensuring performance stability across a range of environmental conditions.

Applications

The versatility of the BUK764R3-40B,118 makes it an ideal choice for a variety of applications, including:

• DC/DC converters
• Motor drives
• Power management systems
• Automotive applications
• Switching regulators
• Load switches

Product Specifications

Parameter Value Drain-Source Voltage (V<sub>DS) 40V Continuous Drain Current (I<sub>D) 75A Power Dissipation (P<sub>D) 110W Operating Temperature -55°C to +175°C Package TO-220AB

With its robust design, the BUK764R3-40B,118 is a reliable and efficient solution for engineers looking to optimize their power management systems. NXP's commitment to quality ensures that this MOSFET delivers consistent performance for a wide range of industrial and automotive applications.