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BUK7C2R2-60EJ

Part No BUK7C2R2-60EJ
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 200A D2PAK-7 / N-Channel 60 V Surface Mount D2PAK-7
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr NXP USA Inc.
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Mounting Type Surface Mount
Supplier Device Package D2PAK-7
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
Base Product Number BUK7C2
Standard Package 800
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1346196-BUK7C2R2-60EJ
Ultra Librarian 3D Model Ultra Librarian BUK7C2R2-60EJ CAD Model

Description

The BUK7C2R2-60EJ is a high-performance Power MOSFET presented by NXP Semiconductors, a leader in the semiconductor industry. This MOSFET is designed to deliver efficiency and reliability for a wide range of applications, including automotive systems, power management, and industrial uses. With its advanced technology and robust package, the BUK7C2R2-60EJ is engineered to meet the rigorous demands of modern electronic circuits.

Key Features

  • Low On-State Resistance (RDS(on)): The BUK7C2R2-60EJ boasts an extremely low on-state resistance, which translates to reduced conduction losses and improved overall efficiency in applications.
  • High-Speed Switching: Designed for fast switching applications, this MOSFET minimizes switching losses, making it suitable for high-frequency power converters and inverters.
  • 60V Drain-Source Voltage (VDS): With a maximum drain-source voltage of 60V, the device can handle a range of operating conditions and is ideal for a variety of circuit designs.
  • 2.2A Continuous Drain Current (ID): The BUK7C2R2-60EJ supports a continuous drain current of 2.2A, providing sufficient current handling capability for many power applications.
  • Enhanced Thermal Performance: Thanks to its optimized package design, the MOSFET offers exceptional thermal performance, ensuring stability and longevity even under high-temperature conditions.
  • Robustness: The device is built to withstand harsh environments and is characterized by its strong resistance to repetitive avalanche and robust gate oxide.

Applications

The versatility of the BUK7C2R2-60EJ makes it suitable for a broad array of applications. It is particularly well-suited for:

  • DC/DC converters
  • Motor control circuits
  • Power supplies
  • Automotive applications, including Electric Power Steering (EPS) and other vehicle power management systems
  • Switch-mode power supplies (SMPS)

The BUK7C2R2-60EJ from NXP is a testament to the company's commitment to providing high-quality, durable, and efficient components for the electronics industry. Whether you're designing for automotive, industrial, or consumer applications, this Power MOSFET is an excellent choice for enhancing system performance and reliability.

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