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BUK956R1-100E,127

Part No BUK956R1-100E,127
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 120A TO220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2.1V @ 1mA
Max Gate Charge 133nC @ 5V
Max Input Capacitance 17460pF @ 25V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 349W (Tc)
Maximum Rds On at Id,Vgs 5.9 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1025364-BUK956R1-100E,127
Popularity Medium
Supply and Demand Status Balance
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian BUK956R1-100E,127 CAD Model

Description

The BUK956R1-100E,127 is a high-performance, N-channel TrenchMOS™ standard level field-effect transistor (FET) designed and manufactured by NXP Semiconductors. This power MOSFET is particularly suitable for fast switching applications due to its exceptional speed and efficiency. It is an ideal choice for a wide range of industrial, computing, and automotive applications where power efficiency and reliability are of utmost importance.

Key Features

  • Low On-State Resistance: The device features a very low on-state resistance (R<sub>DS(on)), which enhances its overall efficiency by minimizing power loss during operation.
  • High-Speed Switching: With its fast switching capabilities, the BUK956R1-100E,127 can handle high-frequency operations, making it perfect for power supplies and DC-DC converters.
  • Standard Level Gate Drive: The MOSFET operates with standard level gate drive voltages, making it compatible with a wide range of drive circuits and simplifying design integration.
  • Robust Thermal Performance: Its excellent thermal characteristics ensure reliable performance even under high temperature conditions, extending the product's lifespan and reliability.
  • Automotive Qualified: Being AEC-Q101 qualified, this product meets the stringent requirements of automotive applications, ensuring high reliability and performance under harsh conditions.

Applications

The versatility of the BUK956R1-100E,127 allows it to be used in a variety of applications, including but not limited to:

  • Automotive systems such as engine control units, power steering, and braking systems.
  • DC-DC converters for both industrial and computing systems.
  • Power management solutions, including switch-mode power supplies (SMPS).
  • Motor drives and controllers, offering efficient power control for electric motors.

Product Specifications

Parameter Value Drain-source voltage (V<sub>DS) 100V Continuous drain current (I<sub>D) 75A Power Dissipation (P<sub>D) 200W Operating Temperature Range -55°C to +175°C

In summary, the BUK956R1-100E,127 MOSFET by NXP stands out for its low on-state resistance, high-speed switching, and robust thermal performance. It is a reliable component for engineers looking to design energy-efficient and high-performing electronic systems, especially in the automotive industry.

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $13.8958 $69.4790
11+ $11.4022 $125.4242
16+ $11.0453 $176.7248
22+ $10.6895 $235.1690
28+ $10.3326 $289.3128
38+ $9.2643 $352.0434
!
Prices are subject to market and will be confirmed after the order is placed.
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Availability: 20,000 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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