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BUK9635-55A,118

Part No BUK9635-55A,118
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 34A D2PAK
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Input Capacitance 1173pF @ 25V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 85W (Tc)
Maximum Rds On at Id,Vgs 32 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 121209-BUK9635-55A,118
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BUK9635-55A,118 CAD Model

Description

Product Overview: BUK9635-55A,118

The BUK9635-55A,118 is a high-performance, N-channel TrenchMOS™ standard level field-effect transistor (FET) produced by NXP Semiconductors, a leader in the semiconductor industry. This powerful transistor is designed to deliver efficient power management and conversion in a variety of applications. It is commonly used in automotive systems, DC-DC converters, motor drives, and other power-intensive applications where reliability and efficiency are paramount.

Key Features

  • Low On-State Resistance: The device boasts an exceptionally low on-state resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved overall efficiency in power circuits.
  • High-Speed Switching: With its fast switching capabilities, the BUK9635-55A,118 ensures minimal power loss during transitions, making it suitable for high-frequency applications.
  • Robust Thermal Performance: The transistor's optimal thermal characteristics ensure reliable operation even under high temperature conditions, extending the life of the product.
  • Standard Level Gate Drive: The device operates at standard gate drive voltages, making it compatible with a wide range of control circuits and simplifying design integration.

Electrical Specifications

  • Drain-Source Voltage (V<sub>DSS): 55V
  • Continuous Drain Current (I<sub>D): 75A
  • Power Dissipation (P<sub>D): 200W
  • Gate-Source Voltage (V<sub>GS): ±20V

Package and Mounting

The BUK9635-55A,118 is housed in a robust TO-220AB package, which is widely used for power transistors due to its excellent thermal and mechanical properties. The package is designed for through-hole mounting, which provides a secure and reliable mechanical and electrical connection to the circuit board.

Applications

  • Automotive applications
  • Switch Mode Power Supplies (SMPS)
  • DC-DC converters
  • Power management systems
  • Motor control circuits

With its combination of performance, efficiency, and reliability, the BUK9635-55A,118 from NXP Semiconductors is an excellent choice for designers looking to optimize their power management systems. Whether for automotive or industrial applications, this transistor is engineered to meet the rigorous demands of modern electronic circuits.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6008 $56.0280
80+ $1.3135 $105.0800
120+ $1.2724 $152.6880
165+ $1.2314 $203.1810
215+ $1.1903 $255.9145
285+ $1.0672 $304.1520
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Availability: 1,120 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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