Product Overview: BUK9Y07-30B - NXP

The BUK9Y07-30B is a high-performance, N-channel TrenchMOS™ standard level field-effect transistor (FET) designed and manufactured by NXP Semiconductors. This power MOSFET is engineered to deliver efficient power conversion and switching in a compact package, making it suitable for a wide range of applications, including automotive systems, power supplies, and industrial equipment.

Key Features

• Low On-State Resistance (R<sub>DS(on)): The device boasts an exceptionally low on-state resistance, which translates to reduced conduction losses and improved overall efficiency in power conversion applications.
• High-Speed Switching: The BUK9Y07-30B is designed for fast switching, enabling high-frequency operation while minimizing switching losses.
• Standard Level Gate Drive: Its standard level gate drive allows for ease of interfacing with a wide range of drive circuits and controllers.
• Robust Thermal Performance: The MOSFET's package is optimized for excellent thermal conduction, ensuring reliable operation even under high power and temperature conditions.
• Automotive Qualified: This product meets stringent automotive qualification standards, ensuring high reliability and performance in automotive environments.

Applications

With its robust design and high efficiency, the BUK9Y07-30B is ideal for various applications, including but not limited to:

• DC-to-DC converters
• Motor drives
• Power management systems
• Battery management systems
• LED lighting systems

Technical Specifications

Parameter Value Drain-source voltage (V<sub>DS) 30V Continuous drain current (I<sub>D) 100A Power dissipation (P<sub>D) 110W Operating temperature range -55°C to +175°C Package LFPAK56 (Power-SO8)

The BUK9Y07-30B from NXP offers a combination of high efficiency, reliability, and performance, making it an excellent choice for designers looking to optimize their power systems for both performance and size.