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BUK9Y11-30B,115

Part No BUK9Y11-30B,115
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 59A LFPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 16.5nC @ 5V
Max Input Capacitance 1614pF @ 25V
Maximum Gate-Source Voltage ±15V
Power Dissipation (Max) 75W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK56, Power-SO8
Dimension SC-100, SOT-669
Win Source Part Number 133336-BUK9Y11-30B,115
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BUK9Y11-30B,115 CAD Model

Description

Introducing the BUK9Y11-30B,115 Power MOSFET by NXP Semiconductors

Delve into the world of efficient power management with the BUK9Y11-30B,115, a cutting-edge Power MOSFET brought to you by NXP Semiconductors. This high-performance transistor is designed to meet the demanding requirements of modern electronic applications, offering both reliability and efficiency. With its compact and robust package, the BUK9Y11-30B,115 is an ideal choice for a wide range of power conversion and switching applications.

Key Features:

  • Low On-State Resistance (Rds(on)): The device boasts an exceptionally low on-state resistance, which translates into reduced conduction losses and improved overall efficiency in your applications.
  • High-Speed Switching: Its fast switching capabilities ensure minimal switching losses and are well-suited for high-frequency operations, making it a versatile component in power supply designs.
  • Enhanced Thermal Performance: The BUK9Y11-30B,115 is encapsulated in a LFPAK33 (Power-SO8) package, which provides excellent thermal conduction and heat dissipation, ensuring stable performance even under high load conditions.
  • Robustness: Engineered for durability, this MOSFET is capable of withstanding high energy pulses in the avalanche and commutation modes, offering a reliable solution for harsh environments.
  • Logic Level Gate Drive: It is compatible with 5V logic level gate drives, allowing for direct interfacing with microcontrollers and simplifying the drive circuitry in many applications.

Applications:

The BUK9Y11-30B,115 is suitable for a broad spectrum of applications, including:

  • DC/DC Converters
  • Motor Drives
  • Power Management Systems
  • Automotive Applications
  • Switch Mode Power Supplies (SMPS)

Whether you are designing power systems for automotive technology, industrial motor control, or energy-efficient power supplies, the BUK9Y11-30B,115 from NXP Semiconductors is an excellent choice that combines performance, efficiency, and reliability. Its state-of-the-art construction and innovative features make it a go-to component for engineers looking to optimize their power management solutions.

Ensure your designs are powered by quality and innovation with the BUK9Y11-30B,115 MOSFET. Trust NXP Semiconductors to provide the components that drive your technology forward.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.3077 $52.3080
95+ $1.0730 $101.9350
145+ $1.0395 $150.7275
200+ $1.0059 $201.1800
260+ $0.9724 $252.8240
345+ $0.8718 $300.7710
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,470 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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