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MD7IC18120GNR1

Part No MD7IC18120GNR1
Manufacturer NXP / Nexperia
Catalog RF Amplifiers
Description RF Amp Module Dual Power Amp 1.88GHz 32V 17-Pin TO-270 W GULL T/R / IC PWR AMP RF LDMOS TO270-16
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories RF/IF and RFID
Manufacturer NXP
Packaging Reel package
Part Status Obsolete(EOL)
Frequency 1.805GHz ~ 1.88GHz
P1dB 50.8dBm (120W)
Gain 25.8dB
RF Type W-CDMA
Operating Supply Voltage 28V
Test Frequency 1.88GHz
Package TO-270-16 Variant, Gull Wing
Manufacturer Package TO-270 WBL-16 GULL
Win Source Part Number 788389-MD7IC18120GNR1
Popularity Medium
Supply and Demand Status Limited
Family Name MD7IC18120GN
Introduction Date May 04, 2010
ECCN EAR99
Halogen Free Not Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian MD7IC18120GNR1 CAD Model

Description

Introducing the MD7IC18120GNR1 RF Power Transistor by NXP Semiconductors

The MD7IC18120GNR1 is a state-of-the-art RF power transistor designed and manufactured by NXP Semiconductors, a leader in the field of high-performance mixed-signal electronics. This robust and efficient transistor is specifically engineered for a wide range of applications, including but not limited to, RF energy, industrial, scientific, and medical (ISM) applications.

At the heart of the MD7IC18120GNR1 is NXP's innovative LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology. This technology enables the transistor to provide exceptional performance with high gain, efficiency, and reliability, which are crucial for demanding applications that require continuous operation under varying conditions.

Key Features of the MD7IC18120GNR1:

  • Frequency Range: The MD7IC18120GNR1 operates over a broad frequency range, making it highly versatile for use in multiple RF applications.
  • High Power: It offers impressive power output, ensuring strong signal transmission and reception for high-demand systems.
  • High Efficiency: Energy efficiency is a hallmark of this transistor, reducing thermal loads and operational costs over time.
  • Ruggedness: Designed to withstand high voltage standing wave ratio (VSWR) conditions, this component is built to last and perform reliably in harsh environments.
  • Thermal Management: The device features an excellent thermal design, which helps to maintain stability and prolong the life of the component.

The MD7IC18120GNR1 is housed in an over-molded plastic package that ensures robust mechanical durability and excellent thermal performance. It is well-suited for applications that require compact and lightweight components without sacrificing power or efficiency.

Whether you are designing systems for commercial RF heating, plasma generation, medical diagnostics, or industrial processing, the MD7IC18120GNR1 from NXP Semiconductors offers a reliable and high-performance solution that can meet the rigorous demands of your applications.

Choose the MD7IC18120GNR1 for your next project to leverage the cutting-edge LDMOS technology and expertise of NXP Semiconductors, and ensure your products are powered by quality and innovation.

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