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MMRF1013HR5

Part No MMRF1013HR5
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 2CH 65V 2.9GHZ / RF Mosfet 30 V 100 mA 2.9GHz 13.3dB 320W NI-1230-4H
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs
Mfr NXP USA Inc.
Package Tape & Reel
Product Status Obsolete
Technology LDMOS
Configuration Dual
Frequency 2.9GHz
Gain 13.3dB
Voltage - Test 30 V
Current - Test 100 mA
Power - Output 320W
Voltage - Rated 65 V
Mounting Type Chassis Mount
Package / Case SOT-979A
Supplier Device Package NI-1230-4H
Base Product Number MMRF1013
Standard Package 50
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Win Source Part Number 1346016-MMRF1013HR5
Ultra Librarian 3D Model Ultra Librarian MMRF1013HR5 CAD Model

Description

NXP MMRF1013HR5 RF Power LDMOS Transistor

The NXP MMRF1013HR5 is a high-performance RF power LDMOS transistor specifically designed for broadband applications. This robust transistor is part of NXP's highly acclaimed RF power transistor product line, which is renowned for delivering exceptional quality and reliability. The MMRF1013HR5 is an ideal choice for a wide range of applications, including but not limited to, RF energy, industrial, scientific, medical, and broadcast transmitter applications, particularly in the VHF and UHF frequency range.

With its excellent thermal stability and high efficiency, the MMRF1013HR5 is engineered to provide consistent performance even under strenuous operating conditions. This device is capable of delivering a powerful output of up to 100 Watts CW over a broad frequency range from 30 MHz to 1.5 GHz. Its high gain, which is typically 16 dB at 1 GHz, enables designers to achieve the desired power levels with fewer stages, simplifying the overall system design.

The MMRF1013HR5 is housed in a rugged ceramic package, which not only ensures its durability but also aids in superior heat dissipation. The transistor's advanced LDMOS technology allows for a wide range of supply voltages, offering flexibility in various circuit designs. Moreover, it is characterized by high ruggedness, capable of withstanding severe load mismatch conditions without any performance degradation, which is crucial for applications where high reliability is paramount.

Features of the NXP MMRF1013HR5 include:

  • Frequency range: 30 MHz to 1.5 GHz
  • Output power: 100 Watts CW
  • Gain: 16 dB typical at 1 GHz
  • High Efficiency: Reduces system power requirements
  • Integrated ESD protection
  • Excellent thermal stability
  • High ruggedness: VSWR > 65:1 at 50 V

Overall, the MMRF1013HR5 is a testament to NXP's commitment to providing cutting-edge RF power solutions that meet the demands of modern broadband applications. Its combination of power, efficiency, and ruggedness makes it an excellent choice for designers looking to create reliable and high-performing systems.

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