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MMRF2010GNR1

Part No MMRF2010GNR1
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description TRANS RF LDMOS 250W 50V / RF Mosfet 50 V 80 mA 1.09GHz 32.1dB 250W TO-270 WB-14 GULL
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs
Mfr NXP USA Inc.
Package Tape & Reel
Technology LDMOS
Frequency 1.09GHz
Gain 32.1dB
Voltage - Test 50 V
Current - Test 80 mA
Power - Output 250W
Voltage - Rated 100 V
Mounting Type Surface Mount
Package / Case TO-270-14 Variant, Gull Wing
Supplier Device Package TO-270 WB-14 GULL
Base Product Number MMRF2010
Standard Package 500
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.33.0001
Win Source Part Number 1345929-MMRF2010GNR1
Ultra Librarian 3D Model Ultra Librarian MMRF2010GNR1 CAD Model

Description

The MMRF2010GNR1 is a high-performance, wideband RF power transistor designed and manufactured by NXP Semiconductors. This device is part of the company's cutting-edge RF product portfolio, engineered to deliver exceptional efficiency, gain, and thermal performance. It is primarily tailored for applications in the broadcast, industrial, scientific, and medical (ISM) sectors, as well as for use in RF energy, plasma generation, and particle accelerators.

Key Features

  • Frequency Range: The MMRF2010GNR1 operates over a broad frequency range, making it versatile for a wide array of RF applications.
  • High Power: It is capable of delivering a high output power, which is essential for applications requiring significant signal amplification.
  • Efficiency: The device is engineered for high efficiency, which helps to minimize power loss and improve overall system performance.
  • Thermal Management: With advanced thermal management capabilities, the MMRF2010GNR1 ensures reliable operation even under high-temperature conditions.
  • Ruggedness: Designed to withstand severe load mismatch conditions, this transistor offers excellent ruggedness, ensuring durability and long-term reliability.

Applications

The MMRF2010GNR1 is suitable for a range of applications, including:

  • RF power amplifiers for broadcast transmitters
  • Industrial heating and welding equipment
  • Medical applications such as MRI and RF ablation
  • Scientific applications, including particle accelerators and plasma generation
  • High-power RF energy systems

Technical Specifications

For engineers and professionals looking to integrate the MMRF2010GNR1 into their designs, the following technical specifications provide a snapshot of its capabilities:

  • Frequency range: Broadband capability
  • Output power: High power levels
  • Efficiency: Optimized for high-efficiency operations
  • Thermal performance: Exceptional thermal characteristics for rigorous applications
  • Ruggedness: High ruggedness rating for demanding environments

For detailed technical data, application notes, and support documentation, interested parties are encouraged to visit NXP Semiconductors' official website or contact their sales and support team.

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