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MRF5S19090HR3

Part No MRF5S19090HR3
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 65V 1.99GHZ NI-780 / Trans RF MOSFET N-CH 65V 3-Pin NI-780 T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel package
Part Status Obsolete(EOL)
Transistor Type LDMOS
Frequency 1.93GHz ~ 1.99GHz
Gain 14.5dB
Voltage - Test 28V
Current - Test 850mA
Power - Output 18W
Voltage Rating DC 65V
Package NI-780
Manufacturer Package NI-780
Win Source Part Number 789427-MRF5S19090HR3
Popularity Medium
Supply and Demand Status Limited
Family Name MRF5S19090H
Introduction Date May 25, 2004
ECCN 5A991
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian MRF5S19090HR3 CAD Model

Description

Product Overview: MRF5S19090HR3 by NXP Semiconductors

The MRF5S19090HR3 is a high-performance Radio Frequency (RF) power transistor designed and manufactured by NXP Semiconductors. This device is specifically engineered for broadband commercial and industrial applications with frequencies ranging from 1930 to 1990 MHz. The versatility of the MRF5S19090HR3 makes it an excellent choice for applications such as base station transceivers for wireless communication, RF power amplifiers, and other telecommunication systems.

Key Features

  • Frequency Range: The MRF5S19090HR3 operates efficiently within the 1930-1990 MHz frequency range, making it suitable for PCS (Personal Communication Service) and other high-frequency applications.
  • High Output Power: With a typical P1dB output power of 90 Watts, this transistor can deliver the power needed for high-demand applications, ensuring strong signal transmission and reception.
  • High Gain: The device features a high gain of 18 dB, which amplifies the RF signal effectively, minimizing the need for additional stages of amplification.
  • High Efficiency: It offers an excellent efficiency of 30%, which helps in reducing the overall power consumption and heat dissipation in the system, leading to more reliable and sustainable operation.
  • Ruggedness: The MRF5S19090HR3 is designed to withstand a mismatched load condition VSWR of 10:1 through all phases of production, implying robustness in the face of varying operational conditions.
  • Integrated ESD Protection: Electrostatic discharge protection is built into the device, which safeguards it against sudden spikes in voltage that could potentially damage the internal circuitry.

Package and Quality

The MRF5S19090HR3 comes in an NI-780 style ceramic package that ensures excellent thermal performance and durability. The package is designed to offer high reliability for long-term use. NXP Semiconductors is known for its commitment to quality, and this product is no exception, meeting stringent quality and performance standards.

Applications

With its robust design and high-performance characteristics, the MRF5S19090HR3 is well-suited for a variety of applications, including but not limited to:

  • PCS base station transceivers
  • RF power amplifiers
  • Wireless telecommunications systems
  • Broadband communications

Overall, the MRF5S19090HR3 by NXP Semiconductors is a reliable and powerful solution for designers looking to enhance the performance of their RF communication systems.

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