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MRF5S9100MBR1

Part No MRF5S9100MBR1
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 68V 880MHZ TO-272-4 / Trans RF MOSFET N-CH 68V 5-Pin TO-272 W T/R
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel package
Part Status Obsolete(EOL)
Transistor Type LDMOS
Frequency 880MHz
Gain 19.5dB
Voltage - Test 26V
Current - Test 950mA
Power - Output 20W
Voltage Rating DC 68V
Package TO-272BB
Manufacturer Package TO-272 WB-4
Win Source Part Number 789435-MRF5S9100MBR1
Popularity Medium
Supply and Demand Status Limited
Family Name MRF5S9100MB
Introduction Date May 28, 2004
ECCN EAR99
Halogen Free Not Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian MRF5S9100MBR1 CAD Model

Description

The MRF5S9100MBR1 is a high-performance RF power transistor from NXP Semiconductors, designed to deliver outstanding performance for a wide range of applications. This device is part of the MRF5S series, which is well-known for its reliability and efficiency in high-power RF amplification tasks.

Key Features

  • Frequency Range: The MRF5S9100MBR1 operates within a frequency range of 860-960 MHz, making it ideal for applications such as cellular base station amplifiers, broadcast transmitters, and industrial uses.
  • High Output Power: With a capability of delivering up to 100W of continuous wave power, this transistor can handle significant power levels, ensuring strong signal amplification.
  • High Gain: It offers a high gain of 18 dB, which allows for efficient signal amplification with minimal additional circuitry.
  • Efficiency: The device boasts an excellent efficiency rating of up to 60%, which helps to reduce power losses and improve overall system performance.
  • Thermal Performance: The MRF5S9100MBR1 is encapsulated in an NI-780S package, which provides superior thermal performance and ensures stability under high-temperature operating conditions.

Applications

The versatility of the MRF5S9100MBR1 makes it suitable for a variety of RF power applications. Its robust design and high power output make it an excellent choice for:

  • Cellular base station amplifiers for GSM, CDMA, and LTE networks
  • RF broadcast transmitters for TV and radio
  • Industrial and scientific applications requiring high-power RF sources
  • Amateur radio amplifiers

Quality and Reliability

NXP Semiconductors is known for their commitment to quality, and the MRF5S9100MBR1 is no exception. It is manufactured to the highest standards, ensuring reliable performance even in the most demanding environments. Whether you're designing a commercial communication system or a high-power industrial RF application, the MRF5S9100MBR1 is a choice you can trust.

For detailed specifications, application notes, and additional resources, please refer to the official NXP Semiconductors documentation for the MRF5S9100MBR1.

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