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MRF6S21060NBR1

Part No MRF6S21060NBR1
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 68V 2.12GHZ TO272-4
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity LDMOS
Frequency 2.12GHz
Gain 15.5dB
Voltage - Test 28V
Current - Test 610mA
Power - Output 14W
Voltage Rating 68V
Case / Package TO-272 WB-4
Win Source Part Number 1079720-MRF6S21060NBR1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian MRF6S21060NBR1 CAD Model

Description

The MRF6S21060NBR1 is a high-performance RF power transistor from NXP Semiconductors, designed for a wide range of applications, including but not limited to, base station and mobile radio applications. This device is part of NXP's renowned MRFS series, which is known for its reliability and efficiency in high-frequency power amplification.

Key Features:

  • Frequency Range: The MRF6S21060NBR1 operates effectively in the 1.8-2.2 GHz frequency range, making it suitable for various communication bands, including LTE, GSM, and CDMA.
  • High Output Power: With an ability to deliver up to 18W of continuous wave power, this RF power transistor can handle significant power levels, ensuring strong signal transmission for communication systems.
  • High Gain: It offers a high gain of 14 dB, which translates to efficient signal amplification, reducing the need for additional stages in the amplification chain.
  • High Efficiency: The device boasts an excellent efficiency of 32%, minimizing power losses and ensuring better thermal management in high-power applications.
  • Integrated ESD Protection: The MRF6S21060NBR1 comes with built-in electrostatic discharge (ESD) protection, enhancing its robustness and reliability in harsh environments.
  • Thermally Enhanced Package: Encased in a ceramic package, it offers superior thermal performance, which is critical for maintaining stability and longevity under high-power operation.

Applications:

This transistor is ideal for RF power amplifiers in base station applications for cellular and mobile radio systems. Its robust design also makes it suitable for industrial, scientific, and medical (ISM) applications, as well as for aerospace and defense communication systems where reliability and performance are paramount.

Quality and Support:

NXP Semiconductors is committed to providing high-quality components that meet stringent industry standards. The MRF6S21060NBR1 is backed by comprehensive technical support and documentation, ensuring that developers can integrate this component into their designs with confidence and achieve optimal performance in their applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $29.3774 $58.7548
5+ $24.1049 $120.5245
8+ $23.3518 $186.8144
11+ $22.5987 $248.5857
14+ $21.8445 $305.8230
18+ $19.5853 $352.5354
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Availability: 252 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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