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MRF7S38040HR3

Part No MRF7S38040HR3
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 65V 3.6GHZ NI-400
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs
Mfr NXP
Package Tape & Reel
Product Status Obsolete
Technology LDMOS
Frequency 3.4GHz ~ 3.6GHz
Gain 14dB
Voltage - Test 30 V
Current - Test 450 mA
Power - Output 8W
Voltage - Rated 65 V
Mounting Type Chassis Mount
Package / Case NI-400-240
Supplier Device Package NI-400-240
Base Product Number MRF7
Standard Package 250 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Win Source Part Number 644223-MRF7S38040HR3
Ultra Librarian 3D Model Ultra Librarian MRF7S38040HR3 CAD Model

Description

Product Overview: MRF7S38040HR3

The MRF7S38040HR3 is a high-performance Radio Frequency (RF) power transistor from NXP Semiconductors, designed to deliver exceptional power and efficiency for a variety of RF applications. This product is part of NXP's MRFS series, which is renowned for its advanced LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology, offering designers a robust and highly reliable solution for their RF power needs.

Key Features

  • Frequency Range: Specifically engineered for broadband applications, the MRF7S38040HR3 operates effectively within the 380-400 MHz frequency range, making it versatile for a wide array of uses including commercial, aerospace, and defense systems.
  • High Output Power: With an impressive output power of 40 W, this transistor can handle demanding applications that require significant power without compromising on performance.
  • High Gain: It boasts a high gain of 18 dB, ensuring that signals are amplified significantly, which is crucial for maintaining signal integrity over long distances or in noisy environments.
  • Efficiency: The device operates with an efficiency of up to 35%, minimizing power loss and ensuring that systems are not only powerful but also energy-efficient.
  • Integrated ESD Protection: The MRF7S38040HR3 comes with built-in Electrostatic Discharge (ESD) protection, safeguarding the device from unexpected voltage spikes and enhancing its durability.
  • Thermal Performance: Excellent thermal performance is guaranteed due to its advanced LDMOS technology, which allows for stable operation even under high-temperature conditions.

Applications

The MRF7S38040HR3 is suitable for a range of applications, including but not limited to:

  • Commercial and Public Radio Systems
  • RF Power Amplifiers
  • Aerospace and Defense Communication Systems
  • Base Station Infrastructure
  • Industrial, Scientific, and Medical (ISM) Applications

Quality and Reliability

NXP Semiconductors is committed to delivering products of the highest quality and reliability. The MRF7S38040HR3 is rigorously tested to meet stringent industry standards, ensuring that it performs consistently in even the most challenging conditions. With the MRF7S38040HR3, designers and engineers can expect a product that not only meets but exceeds their requirements for power, efficiency, and reliability.

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