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MRF9030LSR5

Part No MRF9030LSR5
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 68V 945MHZ NI-360S / Trans RF MOSFET N-CH 68V 3-Pin NI-360S T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel package
Part Status Obsolete(EOL)
Transistor Type LDMOS
Frequency 945MHz
Gain 19dB
Voltage - Test 26V
Current - Test 250mA
Power - Output 30W
Voltage Rating DC 68V
Package NI-360S
Manufacturer Package NI-360S
Win Source Part Number 789466-MRF9030LSR5
Popularity Medium
Supply and Demand Status Limited
Family Name MRF9030LS
Introduction Date March 25, 2005
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian MRF9030LSR5 CAD Model

Description

MRF9030LSR5 - RF Power Field Effect Transistor by NXP

The MRF9030LSR5 is a high-performance Radio Frequency (RF) power LDMOS transistor designed by NXP Semiconductors, a leader in the field of advanced semiconductor solutions. This product is specifically engineered to deliver outstanding RF power and gain while maintaining high efficiency, making it an ideal choice for a wide range of applications, including but not limited to, cellular base station amplifiers, broadcast transmitters, and RF energy applications.

Key Features

  • Frequency Range: The MRF9030LSR5 operates effectively in the 900 MHz frequency range, making it suitable for various communication and broadcasting systems.
  • Output Power: It boasts a high output power level of 300W, ensuring strong signal transmission for reliable communication.
  • High Gain: With a high gain of 18 dB, this transistor amplifies RF signals efficiently, reducing the need for additional amplification stages.
  • Efficiency: The device is designed for high efficiency, minimizing power losses and ensuring cost-effective operation in high-power systems.
  • Integrated ESD Protection: The MRF9030LSR5 includes built-in Electrostatic Discharge (ESD) protection, enhancing the durability and reliability of the device under harsh operating conditions.
  • Thermal Performance: Excellent thermal performance is achieved through the use of an advanced package design, ensuring stable operation even under high-temperature environments.

Applications

The versatility of the MRF9030LSR5 allows it to be used in a variety of applications, including:

  • Commercial and consumer cellular base stations
  • Professional mobile radio amplifiers
  • TV and FM broadcast transmitters
  • Industrial, scientific, and medical (ISM) applications
  • High-power RF energy systems

Quality and Reliability

NXP's commitment to quality ensures that the MRF9030LSR5 is manufactured to the highest standards, providing reliable performance in even the most demanding applications. The device is also RoHS compliant, adhering to environmental standards and regulations.

Overall, the MRF9030LSR5 from NXP is a robust and efficient solution for designers looking to enhance the performance of their RF power applications with a dependable, high-power transistor.

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