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MRFE6VP6600NR3

Part No MRFE6VP6600NR3
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description RF MOSFET LDMOS DL 50V OM780-4
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 25 Weeks
Features RF Mosfet LDMOS (Dual) 50 V 100 mA 230MHz 24.7dB 600W OM780-4
Manufacturer NXP
Package Reel - TR
Package OM780-4
Case / Package OM780-4
Family Name MRFE6
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Other Part Number MRFE6VP6600NR3TR, 935312987528, MRFE6VP6600NR3CT, MRFE6VP6600NR3-ND, MRFE6VP6600NR3DKR
Quantity per package 250
Popularity High
Supply and Demand Status Balance
Win Source Part Number 928109-MRFE6VP6600NR3
Ultra Librarian 3D Model Ultra Librarian MRFE6VP6600NR3 CAD Model

Description

NXP MRFE6VP6600NR3 RF Power LDMOS Transistor

The MRFE6VP6600NR3 is a high-performance RF power LDMOS transistor from NXP Semiconductors, designed to meet the rigorous demands of broadcast, industrial, scientific, and medical (ISM) applications. This device is part of NXP's renowned MRFE6VP series, which is known for its exceptional efficiency, ruggedness, and reliability.

Key Features:

  • Wide Frequency Range: The MRFE6VP6600NR3 operates effectively across a broad frequency range from 1.8 to 600 MHz, making it highly versatile for a variety of RF applications.
  • High Power Output: With an ability to deliver up to 600W CW over its entire operating frequency range, this transistor is capable of handling high-power applications with ease.
  • High Efficiency: The device offers enhanced efficiency, typically 70% or higher in broadcast applications, which helps to reduce thermal management requirements and overall system costs.
  • Integrated ESD Protection: Built-in electrostatic discharge (ESD) protection enhances the durability of the transistor, safeguarding it against unexpected electrical spikes.
  • Thermal Performance: The MRFE6VP6600NR3 is designed with excellent thermal characteristics, ensuring stable performance even under strenuous conditions.

Applications:

  • Broadcast transmitters for AM, FM, and TV
  • Industrial heating, welding, and drying systems
  • Plasma generators for scientific and medical applications
  • RF power generators for particle accelerators and MRI systems

The MRFE6VP6600NR3 is housed in a ceramic package that offers outstanding ruggedness and mechanical stability. Its design is optimized for linear amplifiers with high gain, and it can withstand a VSWR (Voltage Standing Wave Ratio) of 65:1 at 50 V, which is a testament to its ability to endure mismatched load conditions without performance degradation.

Whether you are developing a high-power RF system for broadcasting or looking for a reliable solution for industrial or scientific applications, the NXP MRFE6VP6600NR3 RF power LDMOS transistor is an excellent choice that combines performance, efficiency, and resilience.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $110.7690 $110.7690
2+ $107.1958 $214.3916
3+ $103.6226 $310.8678
4+ $92.9030 $371.6120
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Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,260 pieces
Order Increment : 1 pcs
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