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PBLS2002S,115

Part No PBLS2002S,115
Manufacturer NXP / Nexperia
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN PREBIAS/PNP 1.5W 8SO
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity 1 NPN Pre-Biased, 1 PNP
Maximum Current Collector 100mA, 3A
VCEO Maximum Collector-Emitter Breakdown Voltage 50V, 20V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 4.7k
Typical Gain (hFE) (Min) 30 @ 10mA, 5V / 150 @ 2A, 2V
Max Vce (sat) 150mV @ 500μA, 10mA / 355mV @ 300mA, 3A
Collector Cut-off Current(Max) 1μA, 100nA
Frequency - Transition 100MHz
Maximum Power Dissipation 1.5W
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1086362-PBLS2002S,115
Popularity Medium
Supply and Demand Status Balance
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian PBLS2002S,115 CAD Model

Description

Product Overview: PBLS2002S,115

The PBLS2002S,115 is a high-performance, low-saturation PNP bipolar transistor from NXP Semiconductors, designed to deliver efficient power management within a compact package. This device is ideal for a wide range of applications, including switch mode power supplies (SMPS), power management circuits, and various other energy-critical designs.

Key Features

  • Low VCEsat: The PBLS2002S,115 boasts a low collector-emitter saturation voltage, which translates to reduced power loss during operation and enhanced overall efficiency.
  • High Current Capability: With a continuous collector current of up to 2 A, this transistor can handle significant current loads, making it suitable for high-power applications.
  • Energy Efficiency: The device is optimized for low voltage operation, ensuring energy savings and improved battery life in portable applications.
  • Surface-Mount Package: Encased in a small SOT363 package, the PBLS2002S,115 is designed for surface-mount technology (SMT), allowing for a more streamlined manufacturing process and reduced board space requirements.
  • Robust Performance: Engineered for durability, the PBLS2002S,115 can operate effectively over a wide range of temperatures, ensuring reliable performance in diverse environments.

Applications

The versatility of the PBLS2002S,115 makes it an excellent choice for various applications, including:

  • DC-DC converters
  • Power management modules
  • Load switches
  • Battery-driven devices
  • Motor control circuits

Product Specifications

Parameter Value
Collector-Emitter Voltage (VCEO) 20 V
Collector Current (IC) 2 A
Collector-Emitter Saturation Voltage (VCEsat) Low
Package Type SOT363

For engineers and designers seeking a reliable PNP transistor that offers both power efficiency and space economy, the PBLS2002S,115 from NXP Semiconductors is an outstanding option that meets a broad spectrum of design requirements.

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