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PH16030L

Part No PH16030L
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 38A LFPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 8.2nC @ 4.5V
Max Input Capacitance 680pF @ 12V
Maximum Gate-Source Voltage ±15V
Power Dissipation (Max) 41.6W (Tc)
Maximum Rds On at Id,Vgs 16.9 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK56, Power-SO8
Dimension SC-100, SOT-669
Win Source Part Number 209874-PH16030L
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PH16030L CAD Model

Description

The PH16030L is a cutting-edge LDMOS transistor designed by NXP Semiconductors, a leader in the industry known for its high-performance and reliable components. This product stands out for its exceptional efficiency, thermal performance, and resilience under demanding conditions, making it an ideal choice for a wide range of applications.

Key Features

  • High Efficiency: The PH16030L boasts an impressive efficiency rating, which means it can deliver maximum performance with minimal energy loss. This is particularly beneficial in applications where power conservation is critical.
  • Wide Frequency Range: Designed to operate over a broad frequency spectrum, the PH16030L can be used in various RF applications, from broadcasting to aerospace and defense systems.
  • High Power Output: With its ability to handle high power levels, this LDMOS transistor is perfectly suited for applications that require robust and powerful signal amplification.
  • Thermal Performance: The PH16030L is engineered to maintain stability and performance even under high-temperature conditions, ensuring reliability and longevity of the product.
  • Ruggedness: NXP's commitment to durability is evident in the PH16030L, which is built to withstand tough environments and resist breakdown under harsh operating conditions.

Applications

The versatile nature of the PH16030L allows it to be used in a multitude of applications. It is particularly well-suited for:

  • RF power amplifiers in base stations for mobile communications
  • Broadcast transmitters for television and radio
  • Industrial, scientific, and medical (ISM) applications
  • Avionics and radar systems
  • High-power RF applications requiring linear amplification

Technical Specifications

The PH16030L transistor is encapsulated in a ceramic package that ensures its integrity and performance. It operates within a specific voltage range and is characterized by its high gain and efficiency. For detailed technical specifications, datasheets are available on NXP's official website or through authorized distributors.

In conclusion, the PH16030L from NXP Semiconductors represents a blend of innovation, performance, and reliability. Its advanced LDMOS technology makes it a top choice for professionals seeking a high-quality transistor capable of delivering outstanding results in a variety of high-demand applications.

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