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PHB145NQ06T

Part No PHB145NQ06T
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 75A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 64.7nC @ 10V
Max Input Capacitance 3825pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 250W (Tc)
Maximum Rds On at Id,Vgs 6 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 061456-PHB145NQ06T
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian PHB145NQ06T CAD Model

Description

The PHB145NQ06T is a cutting-edge MOSFET transistor developed by NXP Semiconductors, a renowned leader in the semiconductor industry. This product is designed to cater to a wide range of applications, including but not limited to, power management, automotive electronics, and high-speed switching circuits.

Key Features

  • Low On-Resistance: The PHB145NQ06T boasts an exceptionally low on-resistance, which translates to reduced conduction losses and improved overall efficiency in electronic circuits.
  • High-Speed Switching: Engineered for performance, this MOSFET supports high-speed switching, making it an ideal choice for applications requiring fast response times.
  • Enhanced Thermal Performance: With an advanced design focused on heat dissipation, the PHB145NQ06T ensures reliable operation even under high-temperature conditions.
  • Robustness: The device is characterized by its robustness, capable of withstanding high energy pulses in the avalanche and commutation modes, which is crucial for demanding environments.

Applications

The versatility of the PHB145NQ06T allows it to be integrated into a variety of applications. It is particularly well-suited for:

  • DC/DC converters
  • Motor drives
  • Power management systems
  • Automotive applications
  • Switch mode power supplies (SMPS)

Technical Specifications

The PHB145NQ06T MOSFET is built to deliver top-notch performance with the following technical specifications:

  • Drain-source voltage (V<sub>DS): 60V
  • Continuous drain current (I<sub>D): 145A
  • Power dissipation (P<sub>D): 214W
  • Operating temperature range: -55°C to 175°C

Quality and Reliability

NXP Semiconductors is committed to delivering high-quality products. The PHB145NQ06T MOSFET is no exception and is manufactured with stringent quality control measures to ensure reliability and durability for long-term use.

Conclusion

The PHB145NQ06T from NXP Semiconductors is a testament to the company's dedication to innovation and excellence in the field of power electronics. With its robust features and versatile applications, this MOSFET is an excellent choice for designers looking to enhance the performance and efficiency of their electronic systems.

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