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PHB18NQ10T

Part No PHB18NQ10T
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 18A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 21nC @ 10V
Max Input Capacitance 633pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 79W (Tc)
Maximum Rds On at Id,Vgs 90 mOhm @ 9A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 061458-PHB18NQ10T
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PHB18NQ10T CAD Model

Description

The NXP PHB18NQ10T is a robust TrenchMOS™ silicon technology-based MOSFET designed for high-efficiency power management and switching applications. This advanced power MOSFET is well-suited for a wide range of industrial, computing, and automotive applications where power density and efficiency are critical. With its low on-state resistance and high switching speed, the PHB18NQ10T is engineered to deliver exceptional performance and reliability.

Key Features

  • Low On-State Resistance: The PHB18NQ10T boasts an exceptionally low on-state resistance (R<sub>DS(on)), which significantly reduces conduction losses and improves overall efficiency.
  • High-Speed Switching: This MOSFET is capable of high-speed switching, which makes it suitable for applications requiring fast switching performance such as switching power supplies and DC-DC converters.
  • Enhanced Thermal Performance: The device's enhanced thermal characteristics ensure reliable operation even at high temperatures, making it suitable for thermally demanding scenarios.
  • Voltage Rating: With a drain-source voltage (V<sub>DSS) rating of 100V, it can handle high voltage applications with ease.
  • Improved Efficiency: The TrenchMOS™ technology used in the PHB18NQ10T leads to reduced gate charge (Q<sub>G), which translates to lower switching losses and higher efficiency in power conversion applications.

Applications

The versatility of the PHB18NQ10T MOSFET makes it an excellent choice for a variety of applications, including:

  • DC/DC converters
  • Switching power supplies
  • Motor drives
  • Power management systems
  • Automotive electronics
  • Uninterruptible power supplies (UPS)

Product Summary

The NXP PHB18NQ10T is a testament to the company's commitment to providing high-quality, high-performance power MOSFETs. It stands out with its low R<sub>DS(on), high V<sub>DSS, and fast switching capabilities, making it a reliable and efficient solution for modern electronic applications. Whether it's for industrial automation, automotive technology, or power management systems, the PHB18NQ10T is designed to meet the rigorous demands of today's high-performance electronics.

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $12.3920 $61.9600
12+ $10.1675 $122.0100
18+ $9.8498 $177.2964
25+ $9.5322 $238.3050
32+ $9.2146 $294.8672
42+ $8.2617 $346.9914
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Prices are subject to market and will be confirmed after the order is placed.
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Availability: 3,940 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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