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PHB21N06LT

Part No PHB21N06LT
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description N-channel TrenchMOS transistor Logic level FET
Sample
Rohs State rohs
ECAD Module
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Manufacturer NXP
Win Source Part Number 1237227-PHB21N06LT
Manufacturer Homepage www.nxp.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PHB21N06LT CAD Model

Description

Product Overview: PHB21N06LT - NXP Semiconductors

The PHB21N06LT is a high-performance TrenchMOS™ transistor designed and manufactured by NXP Semiconductors, a leader in providing innovative semiconductor solutions. This field-effect transistor (FET) is specifically engineered to deliver efficient power management and switching with low on-state resistance, making it an ideal choice for a wide range of applications.

Key Features

  • Low Threshold Voltage: The device features a low threshold voltage, ensuring that it can be driven at lower gate voltages, which is beneficial for low-power applications and compatible with logic-level drive signals.
  • High-Speed Switching: The PHB21N06LT is optimized for high-speed switching, reducing switching losses and improving overall efficiency in power conversion systems.
  • Low On-State Resistance (R<sub>DS(on)): With its low on-state resistance, this transistor minimizes conduction losses, which is crucial for applications requiring high current handling with minimal power dissipation.
  • Robust TrenchMOS™ Technology: NXP's proprietary TrenchMOS technology provides superior performance and reliability, ensuring that the transistor can handle high-energy pulses and stress conditions.
  • High Avalanche Energy Rating: The device is rated for high avalanche energy, making it resilient against unexpected voltage spikes and enhancing its suitability for rugged environments.

Applications

The versatility of the PHB21N06LT allows it to be used in a variety of applications, including:

  • DC-to-DC converters
  • Switch-mode power supplies (SMPS)
  • Motor control circuits
  • Automotive systems
  • Battery management systems
  • Load switches

Product Specifications

Some of the key specifications of the PHB21N06LT include:

  • Drain-source voltage (V<sub>DS): 55V
  • Continuous drain current (I<sub>D): 21A
  • Power dissipation (P<sub>D): 45W
  • Operating temperature range: -55°C to 175°C

With its robust design and high-performance characteristics, the PHB21N06LT from NXP Semiconductors is a reliable and efficient solution for designers looking to optimize their power management and switching applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $26.8364 $80.5092
6+ $22.0201 $132.1206
9+ $21.3317 $191.9853
12+ $20.6433 $247.7196
15+ $19.9549 $299.3235
20+ $17.8910 $357.8200
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Availability: 8,300 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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