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PHB32N06LT

Part No PHB32N06LT
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description N-channel enhancement mode field effect transistor
Sample
Rohs State rohs
ECAD Module
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Manufacturer NXP
Win Source Part Number 1237232-PHB32N06LT
Manufacturer Homepage www.nxp.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PHB32N06LT CAD Model

Description

PHB32N06LT N-Channel TrenchMOS™ Transistor from NXP Semiconductors

The PHB32N06LT is a high-performance N-channel, enhancement-mode Field Effect Transistor (FET) from the TrenchMOS™ transistor series by NXP Semiconductors. This product is designed to deliver high-speed switching with low on-state resistance, making it suitable for a wide range of power management applications. The device is housed in a robust SOT78 (TO-220AB) package, ensuring good thermal performance and ease of mounting on printed circuit boards.

Key Features:

  • Low On-State Resistance: The PHB32N06LT offers an exceptionally low on-state resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved overall efficiency in applications.
  • High-Speed Switching: Engineered for fast switching performance, the transistor is an ideal choice for high-frequency power switching applications.
  • High Continuous Current: It can handle a high continuous drain current (I<sub>D), providing robust performance for heavy-load conditions.
  • Enhanced Thermal Performance: The SOT78 package is designed to handle high thermal loads, ensuring reliability even under high operating temperatures.
  • Logic Level Compatible: This transistor can be driven directly by logic level voltages, making it compatible with modern microcontroller interfaces.

Applications:

The versatility of the PHB32N06LT allows it to be used in a variety of applications, including:

  • DC/DC converters
  • Switch-mode power supplies (SMPS)
  • Motor control circuits
  • Automotive systems
  • Power management functions

Technical Specifications:

  • Drain-source voltage (V<sub>DS): 60 V
  • Continuous drain current (I<sub>D): 32 A
  • Power dissipation (P<sub>D): 45 W
  • On-state resistance (R<sub>DS(on)): 0.036 Ω
  • Gate threshold voltage (V<sub>GS(th)): 2.0 - 4.0 V
  • Operating temperature range: -55 °C to 175 °C

The PHB32N06LT N-channel TrenchMOS™ transistor is a testament to NXP's commitment to providing power-efficient and high-performance components for today's energy-conscious electronic designs. Whether it's for industrial, automotive, or consumer electronics, this MOSFET stands out as a reliable and efficient solution.

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.2864 $50.1200
430+ $0.2350 $101.0500
660+ $0.2277 $150.2820
910+ $0.2203 $200.4730
1,175+ $0.2130 $250.2750
1,575+ $0.1910 $300.8250
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,168 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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