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PHB78NQ03LT

Part No PHB78NQ03LT
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 40A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 11nC @ 4.5V
Max Input Capacitance 970pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 107W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 273871-PHB78NQ03LT
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PHB78NQ03LT CAD Model

Description

The NXP PHB78NQ03LT is a high-performance, N-channel TrenchMOS™ logic level FET designed to deliver efficient power management and conversion. This semiconductor device is a testament to NXP's commitment to providing innovative solutions for advanced electronic applications.

Key Features

  • Low Threshold Voltage: The device features a low threshold voltage, making it compatible with logic-level drive signals and suitable for low-voltage applications.
  • High-Speed Switching: With its TrenchMOS technology, the PHB78NQ03LT offers high-speed switching capabilities, which is crucial for reducing switching losses in power conversion systems.
  • Low On-State Resistance: The MOSFET has a low on-state resistance (R<sub>DS(on)), reducing conduction losses and improving overall efficiency.
  • Robust Thermal Performance: The device's excellent thermal characteristics ensure reliability and longevity, even under high current and temperature conditions.
  • Surface-Mount Package: It comes in a D2PAK surface-mount package, which is ideal for space-constrained applications and simplifies the PCB design process.

Applications

The PHB78NQ03LT is versatile and can be used in a wide range of applications, including:

  • DC/DC converters
  • Power management systems
  • Motor drives
  • Computing and server power supplies
  • Automotive systems
  • LED lighting

Technical Specifications

Parameter Value Drain-Source Voltage (V<sub>DS) 30V Current - Continuous Drain (I<sub>D) @ 25°C 75A R<sub>DS(on) Max @ Id, Vgs 7.5mΩ @ 40A, 10V Power Dissipation (P<sub>D) 110W Operating Temperature -55°C to +175°C

With its robust design and powerful performance, the NXP PHB78NQ03LT MOSFET is an ideal choice for engineers looking to enhance the efficiency and reliability of their power management systems.

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