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PHD34NQ10T

Part No PHD34NQ10T
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 35A DPAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 40nC @ 10V
Max Input Capacitance 1704pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 136W (Tc)
Maximum Rds On at Id,Vgs 40 mOhm @ 17A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 061467-PHD34NQ10T
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management, Industrial
Ultra Librarian 3D Model Ultra Librarian PHD34NQ10T CAD Model

Description

The NXP PHD34NQ10T is a state-of-the-art N-channel TrenchMOS logic level FET designed to deliver high performance for a wide range of applications. This robust and efficient MOSFET is part of NXP's leading-edge TrenchMOS portfolio, which is renowned for providing high switching speeds and low on-state resistance, resulting in improved overall efficiency.

Key Features

  • Low Threshold Voltage: The device features a low threshold voltage, making it compatible with logic-level drive signals and suitable for low-voltage applications.
  • High-Speed Switching: With its TrenchMOS technology, the PHD34NQ10T offers fast switching speeds, which is crucial for applications requiring high-frequency operation.
  • Low On-State Resistance (R<sub>DS(on)): The low on-state resistance minimizes conduction losses and improves overall power efficiency, which is essential for power management applications.
  • High Continuous Drain Current (I<sub>D): This MOSFET can handle a high continuous drain current, making it suitable for high-power applications.
  • Robust Thermal Performance: The PHD34NQ10T is designed to operate reliably over a wide temperature range, ensuring performance stability under varying thermal conditions.

Applications

The versatility of the NXP PHD34NQ10T allows it to be used in a multitude of applications, including:

  • DC/DC converters
  • Power management circuits
  • Motor control systems
  • Load switches
  • Automotive applications
  • High-efficiency computing and server power supplies

Quality and Reliability

NXP Semiconductors is committed to delivering products that meet the highest standards of quality and reliability. The PHD34NQ10T is no exception and is manufactured in state-of-the-art facilities, ensuring it meets the rigorous requirements of industrial and automotive industries.

Environmental Considerations

The PHD34NQ10T is designed with environmental considerations in mind. It complies with RoHS regulations, ensuring that it is free from hazardous substances and suitable for use in environmentally sensitive applications.

With its combination of efficiency, performance, and reliability, the NXP PHD34NQ10T is an excellent choice for designers looking to optimize their power systems with a high-quality, logic level MOSFET.

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