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PMBF170DG215

Part No PMBF170DG215
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description PMBF170 - N-channel TrenchMOS intermediate level FET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 300 mA
Gate to Source Voltage (Vgs) 20 V
Maximum Operating Temperature 150 °C
Min Operating Temperature -65 °C
Mount Surface Mount
Packaging Tape & Reel
Radiation Hardening No
RoHS Compliant
Win Source Part Number 1085636-PMBF170DG215
Categories Transistors - FETs, MOSFETs - RF
Manufacturer NXP
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian PMBF170DG215 CAD Model

Description

Introducing the PMBF170DG215 by NXP Semiconductors

The PMBF170DG215 is a cutting-edge field-effect transistor (FET) from the renowned semiconductor manufacturer, NXP. This product is designed to cater to a wide range of applications, providing efficient power management and signal processing capabilities. The PMBF170DG215 is a testament to NXP's commitment to delivering high-quality and reliable components for the electronics industry.

Key Features

  • Device Type: N-channel enhancement mode Field-Effect Transistor (FET)
  • Package: Housed in a compact SOT-23 package, the PMBF170DG215 is ideal for space-constrained applications.
  • Drain-Source Voltage (VDS): It supports a drain-source voltage of up to 60V, providing a robust solution for high-voltage operations.
  • Continuous Drain Current (ID): The transistor can handle a continuous drain current of up to 500 mA, making it suitable for moderate power applications.
  • Low On-Resistance: With a low on-resistance, this FET ensures minimal power loss and heat generation during operation.
  • High-Speed Switching: The PMBF170DG215 is designed for high-speed switching applications, offering quick response times and improved performance.

Applications

The versatile nature of the PMBF170DG215 makes it an excellent choice for a wide array of electronic circuits. It is particularly well-suited for:

  • Power management systems
  • DC/DC converters
  • Motor control circuits
  • Switching regulators
  • Load switches
  • Signal processing

Quality and Reliability

NXP's PMBF170DG215 is built with the highest standards of quality and reliability. Its robust design ensures stable performance even under challenging environmental conditions. The device also features protection against electrostatic discharge (ESD), safeguarding the component during handling and operation.

Conclusion

For designers and engineers looking for a reliable and efficient solution to their FET needs, the PMBF170DG215 from NXP Semiconductors is an excellent choice. Its combination of power handling, speed, and compact form factor makes it a versatile component that can enhance the performance of a broad spectrum of electronic products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,240+ $0.0404 $50.0960
2,640+ $0.0379 $100.0560
4,100+ $0.0366 $150.0600
5,885+ $0.0340 $200.0900
7,625+ $0.0328 $250.1000
9,525+ $0.0315 $300.0375
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 359,360 pieces
MOQ: 1240 pcs
Order Increment : 1 pcs
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